中文
相关论文

相关论文: Electrical-equivalent van der Waals gap for 2D bil…

200 篇论文

We propose spin valves where a 2D non-magnetic conductor is intercalated between two ferromagnetic insulating layers. In this setup, the relative orientation of the magnetizations of the insulating layers can have a strong impact on the…

介观与纳米尺度物理 · 物理学 2018-08-15 C. Cardoso , D. Soriano , N. A. García-Martínez , J. Fernández-Rossier

We numerically solve the electron-hole relative wave function of interlayer excitons in bilayer transition metal dichalcogenides, taking into account the screening effects from both the constituent transition metal dichalcogenides layers…

介观与纳米尺度物理 · 物理学 2024-10-23 Jianju Tang , Songlei Wang , Yuhang Hou , Hongyi Yu

We propose a material platform comprised of transition metal dichalcogenide (TMDC) heterostructures to realize the two-dimensional (2D) helical superconductivity with an intrinsic gap. By van der Waals stacking a 2D superconductor…

超导电性 · 物理学 2025-12-12 Xuance Jiang , Jennifer Cano , Yuan Ping , Yafis Barlas , Deyu Lu

Many monolayer transition metal dichalcogenides, including MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, are direct bandgap two-dimensional (2D) semiconductors with sharp optical resonances at excitonic bound state frequencies. Recent experiments…

介观与纳米尺度物理 · 物理学 2025-10-27 Tobias M. R. Wolf , Tian Xie , Chenhao Jin , Allan H. MacDonald

Two-dimensional (2D) superconductors provide a powerful building block for engineering emergent quantum states shaped by reduced dimensionality, enhanced quantum fluctuations, and interfacial symmetry breaking. In van der Waals…

介观与纳米尺度物理 · 物理学 2026-03-04 Sichun Zhao , Junlin Xiong , Ji Zhou , Shi-Jun Liang , Bin Cheng , Feng Miao

Stacking orders and topological defects substantially influence the physical properties of 2D van der Waals (vdW) materials. However, the inherent features of 2D materials challenge the effectiveness of single characterization techniques in…

The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

A variety of fabrication methods for van der Waals heterostructures have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we report few-layer van der Waals PtS2/PtSe2 heterojunction photodiodes fabricated…

介观与纳米尺度物理 · 物理学 2018-08-07 Jian Yuan , Tian sun , Zhixin Hu , Wenzhi Yu , Weiliang Ma , Kai Zhang , Qiaoliang Bao , Shu Ping Lau , Shenghuang Lin , Shaojuan Li

The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting…

材料科学 · 物理学 2020-10-12 Wouter Mortelmans , Stefan De Gendt , Marc Heyns , Clement Merckling

A GW calculation based on a truncated Coulomb interaction with an added small q limit was applied to 2D van der Waals heterolayered structures, and the Kane dispersion model was used to determine the accurate band gap edge. All ab initio…

材料科学 · 物理学 2025-06-25 Eyasu Tadesse Muda , Tewodros Eyob Ada , Kenate Nemera Nigussa , Cecil N. M. Ouma

Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for…

介观与纳米尺度物理 · 物理学 2019-08-07 Xin Zhang , Kaige Hu , Yifei Li , Guohua Wei , Nathaniel P. Stern , Min Pan , Xiao Li , Hong Luo , Lei Liu

Associating the presence of atomic vacancies to excited-state transport phenomena in two dimensional semiconductors is of emerging interest, and demands detailed understanding of the involved exciton transitions. Here we study the effect of…

介观与纳米尺度物理 · 物理学 2023-10-05 Daniel Hernangómez-Pérez , Amir Kleiner , Sivan Refaely-Abramson

Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and…

Highly customizable interfaces created by van der Waals stacked 2D materials provide an extremely flexible opportunity for engineering and effectively controlling material properties. The atomic-thin nature and strong scalability of…

材料科学 · 物理学 2024-02-14 Xueqian Sun , Ermin Malic , Yuerui Lu

The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical…

The improved photocatalytic water splitting using 2D materials has technological importance for economically viable renewable energy. The present study focuses on the effect of uniaxial, biaxial, and vertical strain on the energy gap and…

材料科学 · 物理学 2023-01-11 Soumendra Kumar Das , Lokanath Patra , Prasanjit Samal , Pratap K Sahoo

2D materials (2DM) and their heterostructures (2D + nD, n = 0,1,2,3) hold significant promise for applications in Electrochemical Energy Storage Systems (EESS), such as batteries. 2DM can serve as van der Waals (vdW) slick interface between…

应用物理 · 物理学 2023-11-14 Dibakar Datta

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at…

Moir\'e engineering in two-dimensional van der Waals bilayer crystals has emerged as a flexible platform for controlling strongly correlated electron systems. The competition between valleys for the band extremum energy position in the…

材料科学 · 物理学 2025-12-11 Sam Olin , Erekle Jmukhadze , Allan H. MacDonald , Wei-Cheng Lee

We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional…

介观与纳米尺度物理 · 物理学 2018-09-19 A. Chaves , J. G. Azadani , V. Ongun Özçelik , R. Grassi , T. Low