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相关论文: Theory of thermionic emission from a two-dimension…

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This paper is devoted to photocarrier transport across a two-dimensional graphene-semiconductor Schottky junction. We study linear response to monochromatic light with excitation energy well below the semiconductor band gap. The operation…

介观与纳米尺度物理 · 物理学 2018-05-31 Maxim Trushin

We present the theory of out-of-plane (or vertical) electron thermal-field emission from 2D semimetals. We show that the current-voltage-temperature characteristic is well-captured by a universal scaling relation applicable for broad…

介观与纳米尺度物理 · 物理学 2023-04-18 L. K. Ang , Yee Sin Ang , Ching Hua Lee

We study heat transport in normal/superconducting graphene junctions. We find that while the thermal conductance displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of the superconductor, it exhibits an…

超导电性 · 物理学 2009-11-13 Takehito Yokoyama , Jacob Linder , Asle Sudbo

In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto…

介观与纳米尺度物理 · 物理学 2016-09-23 Y. S. Ang , L. K. Ang

Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks down. Here we construct a full-band…

介观与纳米尺度物理 · 物理学 2019-07-31 Yee Sin Ang , Yueyi Chen , Chuan Tan , L. K. Ang

Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these…

应用物理 · 物理学 2017-04-26 Fangbo Xu , Alex Kutana , Yang Yang , Boris I. Yakobson

The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors…

介观与纳米尺度物理 · 物理学 2015-06-19 Dhiraj Sinha , Ji Ung Lee

Thermodynamic properties of quasiparticles in a graphene-based structures are investigated. Two graphene superconducting layers (one superconducting component is placed on the top layeredgraphene structure and the other component in the…

介观与纳米尺度物理 · 物理学 2011-10-26 Dima Bolmatov

In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from…

介观与纳米尺度物理 · 物理学 2017-01-24 Shi-Jun Liang , Lay Kee Ang

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap…

材料科学 · 物理学 2012-03-27 S. Tongay , M. Lemaitre , X. Miao , B. Gila , B. R. Appleton , A. F. Hebard

Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions…

材料科学 · 物理学 2015-05-20 D. Tomer , S. Rajput , L. J. Hudy , C. H. Li , L. Li

Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection…

介观与纳米尺度物理 · 物理学 2017-11-08 Roberto Grassi , Yanqing Wu , Steven J. Koester , Tony Low

In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and…

应用物理 · 物理学 2023-07-12 Ashwin Tunga , Zijing Zhao , Ankit Shukla , Wenjuan Zhu , Shaloo Rakheja

Schottky barrier inhomogeneities are expected at the metal/TMDC interface and this can impact device performance. However, it is difficult to account for the distribution of interface inhomogeneity as most techniques average over the…

介观与纳米尺度物理 · 物理学 2020-12-15 Calvin Pei Yu Wong , Cedric Troadec , Andrew T. S. Wee , Kuan Eng Johnson Goh

Vertical heterostructures of van der Waals materials enable new pathways to tune charge and energy transport characteristics in nanoscale systems. We propose that graphene Schottky junctions can host a special kind of photoresponse which is…

介观与纳米尺度物理 · 物理学 2016-11-09 Joaquin F. Rodriguez-Nieva , Mildred S. Dresselhaus , Justin C. W. Song

In this paper, we propose a model to investigate the electron thermionic emission from a single-layer graphene (ignoring the effects of substrate) and to explore its application as the emitter of thermionic energy convertor (TIC). An…

介观与纳米尺度物理 · 物理学 2015-01-22 Shi-Jun Liang , L. K. Ang

By way of the non-equilibrium Green's function simulations and analytical expressions, the quantum thermal conductance of stanene is studied. We find that, due to the existence of Dirac fermion in stanene, the ratio of electron thermal…

材料科学 · 物理学 2016-07-19 Hangbo Zhou , Yongqing Cai , Gang Zhang , Yong-Wei Zhang

The Seebeck effect consists in the induction of a voltage drop due to the temperature difference in a conductor. In the middle of XIXth century, Lord Kelvin has proposed a relation between the Seebeck coefficient and the derivative of the…

介观与纳米尺度物理 · 物理学 2024-05-20 A. V. Kavokin , S. V. Kavokina , A. A. Varlamov , Yuriy Yerin

In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility…

介观与纳米尺度物理 · 物理学 2016-01-05 Antonio Di Bartolomeo

We derive a universal thermodynamic uncertainty relation for Fermionic coherent transport, which bounds the total rate of entropy production in terms of the mean and fluctuations of a single particle current. This bound holds for any…

统计力学 · 物理学 2025-07-29 Kay Brandner , Keiji Saito
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