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The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…

介观与纳米尺度物理 · 物理学 2020-01-10 Enrique G. Marin , Damiano Marian , Marta Perucchini , Gianluca Fiori , Giuseppe Iannaccone

2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of devices and circuits for the…

Two-dimensional (2D) Transition Metal Dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large-scale substrates. The original approach combines large-area physical growth of 2D TMDs layer with high…

介观与纳米尺度物理 · 物理学 2022-09-23 Maria Caterina Giordano , Giorgio Zambito , Matteo Gardella , Francesco Buatier de Mongeot

Transition metal dichalcogenides (TMDs) exist in various crystal structures with semiconducting, semi-metallic, and metallic properties. The dynamic control of these phases is of immediate interest for next generation electronics such as…

材料科学 · 物理学 2026-01-21 Dante Zakhidov , Daniel A. Rehn , Evan J. Reed , Alberto Salleo

Molecular self-assembly is a well-known technique to create highly functional nanostructures on surfaces. Self-assembly on two-dimensional materials is a developing field and has already resulted in the discovery of several rich and…

介观与纳米尺度物理 · 物理学 2017-09-04 Avijit Kumar , Kaustuv Banerjee , Peter Liljeroth

Modulation of electronic properties of materials by electric fields is central to the operation of modern semiconductor devices, providing access to complex electronic behaviors and greater freedom in tuning the energy bands of materials.…

材料科学 · 物理学 2024-01-09 Ashwin Ramasubramaniam , Doron Naveh

As basic building blocks for next-generation information technologies devices, high-quality p-n junctions based on van der Waals (vdW) materials have attracted widespread interest.Compared to traditional two dimensional (2D) heterojunction…

介观与纳米尺度物理 · 物理学 2023-05-12 Huanfeng Zhu , Jialin Li , Qiang Chen , Wei Tang , Xinyi Fan , Fan Li , Linjun Li

Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present a dramatic difference in the electrostatics of PN junctions…

介观与纳米尺度物理 · 物理学 2016-11-29 Hesameddin Ilatikhameneh , Tarek Ameen , Fan Chen , Harshad Sahasrabudhe , Gerhard Klimeck , Rajib Rahman

We study the role of electronegativity in sliding friction for five different two dimensional (2D) monolayer systems using density functional theory (DFT) with van der Waals (vdW) corrections. We show that the friction between the…

材料科学 · 物理学 2020-06-16 Jianjun Wang , Avinash Tiwari , Yang Huang , Yu Jia , B. N. J. Persson

In view of their immensely intriguing properties, two dimensional materials are being intensely researched in search of novel phenomena and diverse application interests, however, studies on the realization of nanocomposites in the…

Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no…

Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural…

Two fundamental extensions to the function of previously described fully field effect two-dimensional (2D) electron heterostructures are presented: First, using the same basic heterostructure design of lithographically defined contacts…

介观与纳米尺度物理 · 物理学 2009-11-13 R. L. Willett , M. J. Manfra , L. N. Pfeiffer , K. W. West

We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple…

介观与纳米尺度物理 · 物理学 2007-05-23 R. L. Willett , L. N. Pfeiffer , K. W. West

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…

仪器与探测器 · 物理学 2021-03-02 Zhijuan Xu , Shisheng Lin , Xiaoqiang Li , Shengjiao Zhang , Zhiqian Wu , Wenli Xu , Yanghua Lu , Sen Xu

Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable…

Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron…

We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene…

介观与纳米尺度物理 · 物理学 2013-09-12 Hannu-Pekka Komsa , Arkady V. Krasheninnikov

Strongly interacting electrons in layered materials give rise to a plethora of emergent phenomena, such as unconventional superconductivity. heavy fermions, and spin textures with non-trivial topology. Similar effects can also be observed…

介观与纳米尺度物理 · 物理学 2022-08-23 Soroush Arabi , Taner Esat , Aizhan Sabitova , Yuqi Wang , Hovan Lee , Cedric Weber , Klaus Kern , F. Stefan Tautz , Ruslan Temirov , Markus Ternes

Semiconductor heterostructures provide a powerful platform for the engineering of excitons. Here we report the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or…