相关论文: Static strain tuning of quantum dots embedded in a…

The vibrational and electronic properties of 2-dimensinal (2D) materials can be efficiently tuned by external strain due to their good stretchability. Resonant Raman spectroscopy is a versatile tool to study the physics of phonons,…

Thanks to the remarkable developments of ultrafast science, one of today's challenges is to modify material state by controlling with a light pulse the coherent motions that connect two different phases. Here we show how strain waves,…

The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A…

Due to their ability to strongly modify the local electromagnetic (EM) field through the excitation of surface plasmon polaritons (SPPs), plasmonic nanostructures have been often used to reshape the emission direction and enhance the…

Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique opto-electronic properties. Here we report that strain gradients induced by substrate patterning result in…

We demonstrate that the resonance frequencies of high-Q microcavities in two-dimensional photonic crystal membranes can be tuned over a wide range by introducing a subwavelength dielectric tip into the cavity mode. Three-dimensional…

We present time-resolved emission experiments of semiconductor quantum dots in silicon 3D inverse-woodpile photonic band gap crystals. A systematic study is made of crystals with a range of pore radii to tune the band gap relative to the…

We demonstrate a compact, spectrally-selective, and tunable delay line for single photons emitted by quantum dots. This is achieved by fine-tuning the wavelength of the optical transitions of such "artificial atoms" into a spectral window…

We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime…

We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the…

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure…

Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that…

We observe large spontaneous emission rate modification of individual InAs Quantum Dots (QDs) in 2D a photonic crystal with a modified, high-Q single defect cavity. Compared to QDs in bulk semiconductor, QDs that are resonant with the…

Semiconductor quantum dots, where electrons or holes are isolated via electrostatic potentials generated by surface gates, are promising building blocks for semiconductor-based quantum technology. Here, we investigate double quantum dot…

Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric…

Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…

By integrating a dielectric microwave resonator with a piezoelectric-based strain device, we develop an in situ strain-tunable microwave spectroscopy technique that enables contactless measurements of superconducting properties under…

Strain tuning is increasingly being recognized as a clean tuning parameter to induce novel behavior in quantum matter. Motivated by the possibility of straining graphene up to $20$ percent, we investigate novel quantum criticality due to…

In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and…