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Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…

介观与纳米尺度物理 · 物理学 2016-03-15 Wlodzimierz Jaskolski , Marta Pelc , Leonor Chico , Andres Ayuela

Marginally twisted bilayer graphene having small twist angles is predicted to exhibit unique structural and electronic properties, though experimental characterization remains limited. Using scanning tunneling microscopy, we investigate…

In the presence of a finite interlayer displacement field bilayer graphene has an energy gap that is dependent on stacking and largest for the stable AB and BA stacking arrangements. When the relative orientations between layers are twisted…

介观与纳米尺度物理 · 物理学 2018-07-11 Dmitry K. Efimkin , Allan H. MacDonald

The AB-BA domain wall in gapped graphene bilayers is a rare naked structure hosting topological electronic states. Here we show, for the first time, direct imaging of its topological edge states by using scanning tunneling microscope. The…

介观与纳米尺度物理 · 物理学 2016-09-02 Long-Jing Yin , Hua Jiang , Jia-Bin Qiao , Lin He

We study surface plasmons in minimally-twisted gapped bilayer graphene that contains a triangular network of partial dislocations (or AB-BA domain walls) hosting topologically protected one-dimensional electronic states. We show that this…

介观与纳米尺度物理 · 物理学 2026-05-05 Brian S. Vermilyea , Michael M. Fogler

Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these…

介观与纳米尺度物理 · 物理学 2019-06-19 W. Jaskólski , A. Ayuela

A twisted graphene bilayer exhibits a triangular Moir\'e pattern in the local stacking, that smoothly alternates between the three basic types AA', AB' and BA'. Under an interlayer bias U, the latter two types develop a spectral gap,…

介观与纳米尺度物理 · 物理学 2013-09-26 Pablo San-Jose , Elsa Prada

Moir\'e network formation in graphene bilayers breaks stacking symmetry, giving rise to domain walls that host topologically protected one-dimensional states. Here we show that these systems undergo an additional symmetry breaking at the…

介观与纳米尺度物理 · 物理学 2026-03-05 Xue Yan , Kaiyun Chen , Yuan Yan , Fan Feng , Minglei Sun , Christian Brandl , Jefferson Zhe Liu

The domain walls between AB- and BA-stacked gapped bilayer graphene have garnered intense interest as they host topologically-protected, valley-polarised transport channels. The introduction of a twist angle between the bilayers and the…

介观与纳米尺度物理 · 物理学 2023-09-06 Nina C. Georgoulea , Nuala M. Caffrey , Stephen R. Power

Theory predicts that the application of an electric field breaks the inversion symmetry of AB and BA stacked domains in twisted bilayer graphene, resulting in the formation of a triangular network of one-dimensional valley-protected helical…

介观与纳米尺度物理 · 物理学 2021-09-10 J. D. Verbakel , Q. Yao , K. Sotthewes , H. J. W. Zandvliet

According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moir\'e patterns produced by small misalignments between its individual layer honeycomb lattices. We have…

We present a comprehensive theoretical study of the topological surface states (TSS) of Bi$_2$Se$_3$, a 3D topological insulator, epitaxially grown on twisted bilayer graphene (tBG). The moir\'e potential induced by tBG folds the TSS Dirac…

介观与纳米尺度物理 · 物理学 2025-05-06 Yoonkang Kim

Minimally twisted bilayer graphene (TBG) with interlayer potential asymmetry host one-dimensional (1D) topological helical states (THSs) at domain walls between AB/BA stacking regions. However, the nature of THS propagation remains elusive.…

介观与纳米尺度物理 · 物理学 2024-10-17 Zhe Hou , Kai Yuan , Hua Jiang

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear…

材料科学 · 物理学 2015-09-30 M. Pelc , W. Jaskólski , A. Ayuela , L. Chico

We theoretically study the electronic structure of small-angle twisted bilayer graphene with a large potential asymmetry between the top and bottom layers. We show that the emergent helical states known to appear on the triangular AB-BA…

介观与纳米尺度物理 · 物理学 2020-03-18 Bonnie Tsim , Nguyen N. T. Nam , Mikito Koshino

The search for new realization of topologically protected edge states is an active area of research. We show that a tilt boundary in gated multi-layer graphene supports topologically protected gapless kink states, associated with quantum…

介观与纳米尺度物理 · 物理学 2013-06-27 Abolhassan Vaezi , Yufeng Liang , Darryl H. Ngai , Li Yang , Eun-Ah Kim

We introduce helical twisted quadrilayer graphene (HTQG), four graphene sheets rotated by the same small angle, as a versatile and experimentally accessible platform for correlated topological matter. HTQG consists of three moir\'e…

强关联电子 · 物理学 2025-10-06 Manato Fujimoto , Naoto Nakatsuji , Ashvin Vishwanath , Patrick Ledwith

We generalize the continuum model for Moir\'e structures made from twisted graphene layers, in order to include lattice relaxation and the formation of channels at very small (marginal) twist angles. We show that a precise description of…

强关联电子 · 物理学 2020-02-19 Niels R. Walet , Francisco Guinea

Twisted van der Waals materials have risen as highly tunable platform for realizing unconventional superconductivity. Here we demonstrate how a topological superconducting state can be driven in a twisted graphene multilayer at a twist…

介观与纳米尺度物理 · 物理学 2024-06-18 Maryam Khosravian , Elena Bascones , Jose L. Lado

When twisted to angles near 1{\deg}, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report…

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