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We investigate the transport properties of quantum dots placed in strong magnetic field using a quantum-mechanical ' approach based on the 2D tight-binding Hamiltonian with direct Coulomb interaction and the Landauer-B\"{u}ttiker (LB)…

介观与纳米尺度物理 · 物理学 2009-10-31 V. Moldoveanu , A. Aldea , A. Manolescu , M. Nita

Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature…

We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a…

强关联电子 · 物理学 2015-06-03 H. Takahashi , R. Okazaki , Y. Yasui , I. Terasaki

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect \cite{Klitzing,Tsui} dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted…

介观与纳米尺度物理 · 物理学 2009-10-08 D. Hsieh , D. Qian , L. Wray , Y. Xia , Y. S. Hor , R. J. Cava , M. Z. Hasan

Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density.…

介观与纳米尺度物理 · 物理学 2017-03-10 D. Sherman , J. S. Yodh , S. M. Albrecht , J. Nygård , P. Krogstrup , C. M. Marcus

We report on recent experimental results from transport measurements with large Hall bars made of high mobility GaAs/AlGaAs heterostructures. Thermally activated conductivities and hopping transport were investigated in the integer quantum…

介观与纳米尺度物理 · 物理学 2009-10-30 M. Furlan

Shubnikov--de Haas (SdH) and Hall-effect measurements of CeBiPt and LaBiPt reveal the presence of simple and very small Fermi surfaces with hole-like charge carriers for both semimetals. In the magnetic material, CeBiPt, we observe a strong…

强关联电子 · 物理学 2007-05-23 G. Goll , J. Hagel , H. v. Loehneysen , T. Pietrus , S. Wanka , J. Wosnitza , T. Yoshino , T. Takabatake

The interplay of electron correlations and topological phases gives rise to various exotic phenomena including fractionalization, excitonic instability, and axionic excitation. Recently-discovered transition-metal pentatellurides can reach…

介观与纳米尺度物理 · 物理学 2023-11-21 Cheng Zhang , Jinshan Yang , Zhongbo Yan , Xiang Yuan , Yanwen Liu , Minhao Zhao , Alexey Suslov , Jinglei Zhang , Li Pi , Zhong Wang , Faxian Xiu

The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of…

We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…

介观与纳米尺度物理 · 物理学 2009-10-31 David H. Cobden , C. H. W. Barnes , C. J. B. Ford

We study critical singularities in the d-wave-like superconducting phase of the hole-doped Hubbard model of repulsively interacting electrons, defined on a two-leg ladder, induced by a magnetic field applied parallel to the ladder plane. We…

强关联电子 · 物理学 2017-03-29 Temo Vekua

Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…

介观与纳米尺度物理 · 物理学 2016-01-26 Yumei Jing , Shaoyun Huang , Kai Zhang , Jinxiong Wu , Yunfan Guo , Hailin Peng , Zhongfan Liu , H. Q. Xu

Kondo insulators have recently aroused great interest because they are promising materials that host a topological insulator state caused by the strong electron interactions. Moreover, recent observations of the quantum oscillations in the…

Strongly correlated fractional quantum Hall liquids support fractional excitations, which can be understood in terms of adiabatic flux insertion arguments. A second route to fractionalization is through the coupling of weakly interacting…

强关联电子 · 物理学 2013-09-04 Armin Rahmani , Rodrigo A. Muniz , Ivar Martin

Magneto-transport properties of SrIrO$_3$ thin films epitaxially grown on SrTiO$_3$, using reactive RF sputtering, are investigated. A large anisotropy between the in-plane and the out-of-plane resistivities is found, as well as a signature…

强关联电子 · 物理学 2017-07-04 L. Fruchter , O. Schneegans , Z. Z. Li

The article presents the results of measurement and analysis of the field dependences of the static magnetic susceptibility of thin epitaxial silicon carbide films grown on the (110) surface of single-crystal silicon by the method of the…

Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…

强关联电子 · 物理学 2019-02-05 F. Massee , Y. K. Huang , M. S. Golden , M. Aprili

Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures…

Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied…

We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a…

介观与纳米尺度物理 · 物理学 2017-08-02 S. Grauer , K. M. Fijalkowski , S. Schreyeck , M. Winnerlein , K. Brunner , R. Thomale , C. Gould , L. W. Molenkamp