相关论文: Electron effective mass in Sn-doped monoclinic sin…
Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure $c$-plane oriented In$_{0.33}$Ga$_{0.67}$N epitaxial layer. Room temperature electron…
The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass…
Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction.…
We find that layered materials composed of various oxides of cations with $s^2$ electronic configuration, $XY_2$O$_4$, $X$=In or Sc, $Y$=Ga, Zn, Al, Cd and/or Mg, exhibit isotropic electron effective mass which can be obtained via averaging…
In this article, the electronic band structure $\beta-(Al_xGa_{1-x})_2O_3$ alloy system is calculated with $\beta-Ga_2O_3$ as the bulk crystal. The technique of band unfolding is implemented to obtain the effective bandstructure…
Impact ionization coefficients of anisotropic monoclinic $\beta $-Ga$_{2}$O$_{3}$ are estimated along four crystallographic directions and the plot for the $\left[ 010 \right]$ direction is shown. The approximation models were fitted to…
The alloying of the group-III transparent semiconducting sesquioxides In$_2$O$_3$ and Ga$_2$O$_3$ can lead to a modulation of the properties of the parent compounds, e.g., the shallow- and deep-donor character of the oxygen vacancy or the…
We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy…
The semiconducting oxide $\beta$-Gallium Oxide ($\beta$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described…
This work reports an investigation of electron transport in monoclinic \beta-Ga2O3 based on a combination of density functional perturbation theory based lattice dynamical computations, coupling calculation of lattice modes with collective…
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at…
The effective mass is one of the main factors for enlarging the Seebeck coefficient and electronic conductivity of SrTiO3-based thermoelectric materials [1,2]. The goal of this paper is to clarify, how superlattices can change the effective…
Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a…
Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological…
The high room temperature mobility and the electron effective mass in BaSnO$_3$ are investigated in depth by evaluation of the free carrier absorption observed in infrared spectra for epitaxial films with free electron concentrations from…
By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor…
Electron paramagnetic resonance (EPR) study of MBE grown Mn doped GaAs is presented. The resolved fine structure allows us to evaluate the crystal field parameters of the spin Hamiltonian. The obtained cubic constant is a= -14.1 10^-4/cm.…
Anisotropies of electrical resistivity, upper critical field, London penetration depth and critical currents have been measured in single crystals of the optimally doped iron pnictide superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, $x$=0.074…
The effective mass is one of the main factors determining the Seebeck coefficient and electronic conductivity. Nb-doping increases the effective mass because of two reasons, lattice constants increase and electronic effects. In this…
We report on a study of electric resistivity and magnetic susceptibility measurements in electron irradiated SrTi$_{0.987}$Nb$_{0.013}$O$_3$ single crystals. Point-like defects, induced by electron irradiation, lead to an almost threefold…