相关论文: Magnetic field dependence of edge states in MoS$_2…
Using the tight-binding approach, we investigate the energy spectrum of square, triangular and hexagonal MoS$_2$ quantum dots (QDs) in the presence of a perpendicular magnetic field. Novel edge states emerge in MoS$_2$ QDs, which are…
The electronic structure of monolayer MoS$_2$ nanoribbons and quantum dots have been investigated by means of an effective $\mathbf{k}\cdot \mathbf{p}$ two-band model. Both systems with borders exhibit states spatially localized on the…
We consider the motion of electrons confined to a two dimensional plane with an externally applied perpendicular inhomogeneous magnetic field, both with and without a Coulomb potential. We find that as long as the magnetic field is…
We present a theoretical study of the magnetic band structure of conduction and valence states in Quantum Well Wires in high magnetic fields. We show that hole mixing results in a very complex behavior of valence edge states with respect to…
We theoretically investigate the electronic and magneto-optical properties of rectangular, hexangular, and triangular monolayer phosphorene quantum dots (MPQDs) utilizing the tight-binding method. The electronic states, density of states,…
We investigate the electron states and optical absorption in square- and hexagonal-shaped two-dimensional (2D) HgTe quantum dots and quantum rings in the presence of a perpendicular magnetic field. The electronic structure is modeled by…
We first derive the energy dispersion of bilayer MoS$_{2}$ in the presence of a perpendicular electric field $E_z$. We show that the band gap and layer splitting can be controlled by the field $E_z$. Away from the $k$ point, the intrinsic…
We describe here recent work on the electronic properties, magnetoexcitons and valley polarised electron gas in 2D crystals. Among 2D crystals, monolayer $MoS_2$ has attracted significant attention as a direct-gap 2D semiconductor analogue…
We study the ballistic edge-channel transport in quantum wires with a magnetic quantum dot, which is formed by two different magnetic fields B^* and B_0 inside and outside the dot, respectively. We find that the electron states located near…
To investigate quantum nature of two dimensional electrons subject to high perpendicular magnetic fields, usually a planar electronic Fabry-P\'erot interferometer is utilized. In this work, we investigate an interferometer defined on a…
The Aharonov-Bohm effect is measured in a four-terminal open ring geometry based on a Ga[Al]As heterostructure. Two quantum dots are embedded in the structure, one in each of the two interfering paths. The number of electrons in the two…
We describe here a theory of a quantum dot in an electrically tunable MoSe$_2$/WSe$_2$ heterostructure. Van der Waals heterostructures allow for tuning their electronic properties beyond their monolayer counterparts. We start by determining…
Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic…
We consider magnetic oscillations due to Landau quantization in the mixed state of type-II superconductors. Our work is based on a previously developed formalism which allows the mean-field gap equations of the Abrikosov state to be…
We theoretically studied the quasiparticle transport in a 2D electron gas biased in the quantum Hall regime and in the presence of a lateral potential barrier. The lateral junction hosts the specific magnetic field dependent quasiparticle…
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of HgTe quantum dot with an inverted band…
In this work, we investigate the electronic and optical properties of the b-AsP quantum dots(QDs) and quantum rings(QRs) with different edge types in the presence of an in-plane electric field and a perpendicular magnetic field utilizing…
Stacking monolayer semiconductors results in moir\'e patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate…
We explore the electronic structure, orbital character and topological aspect of a monolayer MoS$_2$ nanoribbon using tight-binding (TB) and low-energy (${\bm k}\cdot{\bm p} $) models. We obtain a mid-gap edge mode in the zigzag ribbon of…
We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct…