相关论文: GaZn-VZn acceptor complex defect in Ga-doped ZnO

We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the…

Defect engineering is promising to tailor the physical properties of two-dimensional (2D) semiconductors for function-oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects…

Nanocomposite films of Zinc Oxide and Silicon were grown by thermal evaporation technique using varying ratios of ZnO:Si in the starting material. Analysis reveal the role of ZnO and amorphous silicon interface in contributing to relatively…

GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that optical emission of such NWs occurs either predominantly above…

Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites…

Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…

In this paper, Ni-doped ZnO films were grown on a p-type silicon substrate via spray pyrolysis. The Ni dopant concentrations were varied by adjusting the weight ratio between Zinc Acetate Dehydrate (ZAD) and Nickel Chloride Hexahydrate…

Iron self-diffusion in nano-composite FeZr alloy has been investigated using neutron reflectometry technique as a function of applied compressive stress. A composite target of (Fe+Zr) and (57Fe+Zr) was alternatively sputtered to deposit…

Several experimental studies have referred to the grain boundary (GB) defect as the origin of the ferromagnetism in ZnO. However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and…

A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with…

We present a first-principles study of the relationship between stress, temperature and electronic properties in piezoelectric ZnO. Our method is a plane wave pseudopotential implementation of density functional theory and density…

Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the…

In order to achieve ultrafast response in MgZnO based self-powered Schottky type photodetectors, it is crucial to decrease both the junction capacitance and carrier transit time. To meet these criteria, Au/MgZnO/ITO Schottky junction…

Electronic band structure and optical properties of zinc monochalcogenides with zinc-blende- and wurtzite-type structures were studied using the ab initio density functional method within the LDA, GGA, and LDA+U approaches. Calculations of…

Uniaxial hot pressing has been used to obtain ceramics based on zinc oxide, and their optical, x-ray-structure, luminescence, and scintillation characteristics have been studied. It is shown that, by changing the concentration of the dopant…

Zinc tin nitride (ZnSnN2) is attracting growing interest as a non-toxic and earth-abundant photoabsorber for thin-film photovoltaics. Carrier transport in ZnSnN2 and consequently cell performance are strongly affected by point defects with…

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled…

Complex impedance spectroscopy data in the frequency range 16Hz < f < 3 MHz at room temperature were acquired on pure ZnO single crystal and thin film. The measured impedance of the ZnO samples shows large changes with time after exposure…

The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples…

Electronic, optical and transport properties of the graphene/ZnO heterostructure have been explored using first-principles density functional theory. The results show that Zn12O12 can open a band gap of 14.5 meV in graphene, increase its…