相关论文: A Study of S doped ZnSb
Fe-doped ZnO nanocrystals are successfully synthesized and structurally characterized by using x-ray diffraction and transmission electron microscopy. Magnetization measurements on the same system reveal a ferromagnetic to paramagnetic…
We report an investigation of temperature- and doping-dependent thermoelectric behaviors of topological semimetal Cd3As2. The electrical conductivity, thermal conductivity, Seebeck coefficient, and figure of merit (ZT) are calculated by…
It has been demonstrated that InSb nanoinclusions, which are formed in situ, can simultaneously improve all three individual thermoelectric properties of the n-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al., Acta Mater. 58, 4795…
SnSe is a promising thermoelectric material with record-breaking figure of merit, \textit{i.e., ZT}. As a semiconductor, optimal electrical dosage is the key challenge to maximize \textit{ZT} in SnSe. However, to date a comprehensive…
We report first principles calculations of the structural, electronic, elastic and vibrational properties of the semiconducting orthorhombic ZnSb compound. We study also the intrinsic point defects in order to eventually improve the…
The magnetic field dependence of the specific heat of Zn-doped single crystals of YBa_{2}Cu_3O_{6.95} was measured between 2 and 10 K and up to 8 Tesla. Doping levels of 0, 0.15%, 0.31%, and 1% were studied and compared. In particular we…
We investigated the electrical conductivity, thermal conductivity and thermopower as a function of Nb content (x) in Ba0.7Eu0.3Ti1-xNbxO3 (x = 0.001- 0.10) in the temperature range T = 400-2 K. The substitution of Nb destabilizes the…
We present new specific heat data for Nb3Sn, a well-known technically applied superconductor with a critical temperature T_c ~ 18 K, in the temperature range from 1.2 to 200 K in zero magnetic field, and from 1.5 to 22 K in fields H <= 16…
The temperature dependence of the London penetration depth $\Delta\lambda(T)$ in the superconducting doped topological crystalline insulator Sn$_{1-x}$In$_x$Te was measured down to 450 mK for two different doping levels, x $\approx$ 0.45…
We report the results of electrical resistivity, magnetic and thermodynamic measurements on polycrystalline SnSb, whose structure consists of stacks of Sb bilayers and Sn4Sb3 septuple layers along the c-axis. The material is found to be a…
Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial…
Motivated by a recent observation of good thermoelectric properties in %a %pyrite material PtSb$_2$, we theoretically study related pyrites %materials in an attempt to %find a %better thermoelectric material. %Our aim is to seek for a…
The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the…
In the present work, we report the experimental thermopower ($\alpha$) data for ZnV$_{2}$O$_{4}$ compound in the high temperature range 300-600 K. The value of $\alpha$ is found to be $\sim$184 and $\sim$126 $\mu$V/K at $\sim$300 and…
As-Based Zintl compounds Ba1-xKxCd2As2 crystallized in the CaAl2Si2-type structure (space group P3-m1) were prepared using solid-state reactions followed by hot-pressing. We have successfully substituted K for Ba up to x = 0.08, producing…
We report high-resolution neutron powder diffraction on Sr0.61Ba0.39Nb2O6, SBN61, in the temperature range 15-500 K. The results indicate that the low-temperature anomalies (T<100K) observed in the dielectric dispersion are due to small…
We report the measurements of in-plane resistivity, Hall effect, and Nernst effect in Zn doped YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ epitaxial thin films grown by pulsed laser deposition technique. The pseudogap temperature, $T^*$, determined…
The thermodynamic properties of the Zr-Nb alloy are investigated at temperatures below 890 K with ab initio calculations. The solution energies of the bcc Nb-rich and hcp Zr-rich solid solutions obtained within the framework of density…
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has…
It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric…