相关论文: A Study of S doped ZnSb

SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the…

The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…

The thermoelectric power S and the thermal conductivity k of stoichiometric and vacancy-doped CaB6 have been measured between 5 and 300 K. The thermopower of both materials is surprisingly large at room temperature. Across the whole covered…

The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using…

Resistivity, Hall effect, Seebeck coefficient, thermal conductivity, heat capacity, and magnetic susceptibility data are reported for CrSb2 single crystals. In spite of some unusual features in electrical transport and Hall measurements…

We report 45% enhancement in the thermoelectric figure of merit, ZT of Sr3SnO via Ca substitution. First-principles calculations have been performed to study the electronic and thermoelectric transport properties of Ca substituted Sr3SnO…

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and,…

Zinc metal-silicate fractionation provides experimental access to the conditions of core formation and Zn has been used to estimate the S contents of the Earth's core and of the bulk Earth, assuming that they share similar volatility and…

We present SQUID susceptibility data on Zn and Ni substituted YBa_{2}Cu_{3}O_{6+x}. Cross-checks with NMR yield an unprecedented accuracy in the estimate of the magnetic susceptibility associated with the substituants, from the underdoped…

Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We…

Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have…

In this study, the effect of Sr- and Ni-doping on microstructural, morphological and sensing properties of ZnO nanorods has been investigated. Nanorods with different Sr and Ni loadings were prepared using a simple wet chemical method and…

By partially substituting the tri-valence element La with di-valence element Sr in $LaOFeAs$, we introduced holes into the system. For the first time, we successfully synthesized the hole doped new superconductors $(La_{1-x}Sr_x)OFeAs$. The…

We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature,…

Copper-based sulfide is an attractive material for Earth-abundant thermoelectrics. In this study, we demonstrate the effect of Sn-substitution on the electrical and thermal transport properties of fematinite Cu3SbS4 from 300 to 573 K. The…

We have investigated the electronic and thermoelectric properties of half-Heusler alloys NiTZ (T = Sc, and Ti; Z = P, As, Sn, and Sb) having 18 valence electron. Calculations are performed by means of density functional theory and Boltzmann…

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported…

The thermodynamic properties of Bi-Sn were studied at 600 and 900K using a quasi-lattice theory. After successful fitting of Gibbs free energies of mixing and thermodynamic activities, the fitting parameters were used to investigate the…

Applications that utilize scintillation detectors at low temperatures are growing in number. Many of these require materials with high light yield and a fast response. Here we report on the low-temperature characterisation of ZnSe doped…

Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01,…