相关论文: A Study of S doped ZnSb

Thermoelectric materials operating at cryogenic temperatures are in high demand for efficient cooling and power generation in applications ranging from superconductors to quantum computing. The narrow band-gap semiconductor FeSb2, known for…

We report the effect of co-doping of In and Ga at low concentrations on the structural, electronic, and thermoelectric properties of SnTe based compositions $Sn_{1.03-2x}In_{x}Ga_{x}Te$ (x = 0, 0.01, 0.02, 0.04) prepared by the solid-state…

The potential of Fe2TiSn full-Heusler compounds for thermoelectric applications has been suggested theoretically, but not yet grounded experimentally, due to the difficulty of obtaining reproducible, homogeneous, phase pure and defect free…

The potential of bulk black-phosphorus for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 +- 10 uV/K at…

Doped films of organic small molecules are investigated with respect to their thermoelectric properties. A variety of hosts and dopants, for both n and p-doping, are compared. C$_{60}$ n-doped by Cr$_2$(hpp)$_4$ or o-MeO-DMBI-I are found to…

Gray tin ({\alpha}-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve either n-type or p-type doping in the {\alpha}-Sn layer.…

Kondo insulator FeSb$_2$ with large Seebeck coefficient would have potential in thermoelectric applications in cryogenic temperature range if it had not been for large thermal conductivity $\kappa$. Here we studied the influence of…

We show here for the first time the use of a cold sintering process (CSP) to sinter CoSb3-based thermoelectric materials. CSP at 150 {\deg}C for 90 min under a uniaxial pressure of 750 MPa yields pieces with a relative density of 86 %,…

Mossbauer analysis is carried out on CZTS samples, subjected to a low temperature processing at 3000C (S1) and high temperature processing at 5500C under sulfur environment (S2). Loss of Sn is observed in sample S2 due to high temperature…

Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in…

We report the thermoelectric (TE) properties of Na$_{0.74}$Co$_{0.95}$Nb$_{0.05}$O$_{2}$ in the temperature range $300-1200$ K, as a potential candidate for p-type thermoelectric material. The experimental values of Seebeck coefficient (S)…

We report giant thermopower S = 2.5 mV/K in CoSbS single crystals, a material that shows strong high-temperature thermoelectric performance when doped with Ni or Se. Changes of low temperature thermopower induced by magnetic field point to…

SnS2 stands out as a highly promising two-dimensional material with significant potential for applications in the field of electronics. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by doping with…

The recent discovery of n-type Mg$_3$Sb$_2$ thermoelectric has ignited intensive research activities on searching for potential n-type dopants for this material. Using first-principles defect calculations, here we conduct a systematic…

Recently SnSe compound was reported to have a peak thermoelectric figure-5 of-merit (ZT) of 2.62 at 923 K, but the ZT values at temperatures below 750 K are relatively low. In this work, the electronic structures of SnSe are calculated…

A novel and direct method is proposed to assess the doping limits of semiconducting materials. Applied to the case of ZnO, our first-principles calculations demonstrate that p-type ZnO is thermodynamically unstable.

We present the effects of lead doping on the thermoelectric properties of Tellurium Telluride, prepared by solid state reactions in an evacuated sealed silica tubes. Structurally, all these compounds were found to be phase pure as confirmed…

We investigate electronic structures and thermoelectric properties of recent synthetic half-Heusler $\mathrm{ZrNiPb}$ by using generalized gradient approximation (GGA) and GGA plus spin-orbit coupling (GGA+SOC). Calculated results show that…

We report a strategy based on introduction of point defects for improving the thermoelectric properties of FeSb2, a promising candidate for low temperature applications. Introduction of Sb deficiency to the tune of 20% leads to enhancement…

We study the electronic transport coefficients and the thermoelectric figure of merit ZT in $n$-doped Mg$_3$Sb$_2$ based on density-functional electronic structure and Bloch-Boltzmann transport theory with an energy- and…