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Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers…

We present the very first demonstration of a maser utilizing silicon vacancies (VSi) within 4H silicon carbide (SiC). Leveraging an innovative feedback-loop technique, we elevate the resonator's quality factor, enabling maser operation even…

Hybrid spin-mechanical systems are a promising platform for future quantum technologies. Usually they require application of additional microwave fields to project integer spin to a readable state. We develop a theory of optically detected…

介观与纳米尺度物理 · 物理学 2019-09-18 A. V. Poshakinskiy , G. V. Astakhov

Coupling microwave cavity modes with spin qubit transitions is crucial for enabling efficient qubit readout and control, long-distance qubit coupling, quantum memory implementation, and entanglement generation. We experimentally observe the…

Atom spin sensors occupy a prominent position in the scenario of quantum technology, as they can combine precise measurements with appealing miniature packages which are crucial for many applications. In this work, we report on the design…

量子物理 · 物理学 2024-02-27 J. D. Zipfel , P. Bevington , L. Wright , W. Chalupczak , G. Quick , B. Steele , J. Nicholson , V. Guarrera

The silicon vacancy center in Silicon Carbide (SiC) provides an optically addressable qubit at room temperature in its spin-$\frac{3}{2}$ electronic state. However, optical spin initialization and readout are less efficient compared to…

Through their ability to achieve cryogenic levels of noise performance while operating at room temperature, optically-pumped, solid-state (OPSS) masers show great promise as quantum sensors, oscillators, and amplifiers. We here demonstrate…

量子物理 · 物理学 2026-01-08 Michael Newns , Shirley Xu , Mingyang Liu , Zike Cheng , Yifan Yu , Ziqiu Huang , Max Attwood , Mark Oxborrow

We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…

材料科学 · 物理学 2014-04-07 T. C. Hain , F. Fuchs , V. A. Soltamov , P. G. Baranov , G. V. Astakhov , T. Hertel , V. Dyakonov

Masers once represented the state-of-the-art in low noise microwave amplification technology, but eventually became obsolete due to their need for cryogenic cooling. Masers based on solid-state spin systems perform most effectively as…

The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an…

介观与纳米尺度物理 · 物理学 2015-10-19 S. G. Carter , Ö. O. Soykal , Pratibha Dev , Sophia E. Economou , E. R. Glaser

Implementing stimulated Raman scattering in a low-loss microresonator could lead to Raman lasing. Here, we report the demonstration of an efficient Raman laser with $>50 \%$ power efficiency in an integrated silicon carbide platform for the…

Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical…

光学 · 物理学 2015-09-01 Xiyuan Lu , Jonathan Y. Lee , Qiang Lin

Each cycle of a quantum computation requires a quantum state initialisation. For semiconductor-based quantum platforms, initialisation is typically performed via slow microwave processes and usually requires cooling to temperatures where…

Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective,…

Recent experiments have demonstrated Rabi-oscillations, superradiant pulses and stimulated emission from negatively-charged nitrogen-vacancy ($\mathrm{NV}^{-}$) center spins in microwave resonators. These phenomena witness the kind of…

量子物理 · 物理学 2021-05-27 Qilong Wu , Yuan Zhang , Xigui Yang , Shi-Lei Su , Chongxin Shan , Klaus Mølmer

Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the…

Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken…

Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal…

量子物理 · 物理学 2020-05-05 Z. Shang , A. Hashemi , Y. Berencén , H. -P. Komsa , P. Erhart , A. V. Krasheninnikov , G. V. Astakhov

We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…

介观与纳米尺度物理 · 物理学 2018-02-14 S. A. Tarasenko , A. V. Poshakinskiy , D. Simin , V. A. Soltamov , E. N. Mokhov , P. G. Baranov , V. Dyakonov , G. V. Astakhov

Efficient optical pumping is an important tool for state initialization in quantum technologies, such as optical quantum memories. In crystals doped with Kramers rare-earth ions, such as erbium and neodymium, efficient optical pumping is…

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