相关论文: A bright nanowire single photon source based on Si…
Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics…
We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of…
The development of a robust light source that emits one photon at a time is an outstanding challenge in quantum science and technology. Here, at the transition from many to single photon optical communication systems, fully quantum…
The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow…
Single photons are fundamental elements for quantum information technologies such as quantum cryptography, quantum information storage and optical quantum computing. Colour centres in diamond have proven to be stable single photon sources…
Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature.…
The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by…
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are…
Diamonds containing color centers have recently gathered significant attention for photonic quantum technologies, including quantum sensing, photonic quantum computers, and quantum networks. Among the various color centers, tin-vacancy…
Single-photon sources are a fundamental element for developing quantum technologies, and sources based on colour centres in diamonds are among the most promising candidates. The well-known NV centres are characterized by several…
Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum…
Color centers in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication…
We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV…
The development of materials processing techniques for optical diamond nanostructures containing a single color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation…
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per…
Coherent exchange of single photons is at the heart of applied Quantum Optics. The negatively-charged silicon vacancy center in diamond is among most promising sources for coherent single photons. Its large Debye-Waller factor, short…
The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV)…
Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal…
Ultra-small, low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to…
Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the…