相关论文: A bright nanowire single photon source based on Si…
Silicon vacancy (SiV) centers in diamonds have emerged as a very promising candidate for quantum emitter due to their narrow emission line resulting in their indistinguishability. While many different quantum emitters have already been used…
Quantitative and reproducible optical characterization of single quantum emitters is crucial for quantum photonic materials research, yet controlling for experimental conditions remains challenging due to a lack of an established reference…
Diamond photonics is an ever growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field been shaped by…
A fully integrated quantum optical technology requires active quantum systems incorporated into resonant optical microstructures and inter-connected in three dimensions via photonic wires. Nitrogen vacancy-centres (NV-centres) in diamond…
The silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers in diamond are commonly regarded as prototypical defects for solid-state quantum information processing. Here we show that when silicon and nitrogen are simultaneously introduced…
Photon-mediated coupling between distant matter qubits may enable secure communication over long distances, the implementation of distributed quantum computing schemes, and the exploration of new regimes of many-body quantum dynamics.…
Diamond colour centres are promising optically-addressable solid state spins that can be matter-qubits, mediate deterministic interaction between photons and act as single photon emitters. Useful quantum computers will comprise millions of…
Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and…
Negatively charged silicon vacancy centers in diamond (SiV$^-$) are promising for quantum photonic technologies. However, when subject to resonant optical excitation, they can inadvertently transfer into a zero-spin optically dark state. We…
The silicon-vacancy center in diamond holds great promise as a qubit for quantum communication networks. However, since the optical transitions are located within the visible red spectral region, quantum frequency conversion to low-loss…
Diamond has emerged as a leading host material for solid-state quantum emitters, quantum memories, and quantum sensors. However, the challenges in fabricating photonic devices in diamond have limited its potential for use in quantum…
The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly…
The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we…
NV centers in diamond are generally recognized as highly promising as indefinitely stable highly efficient single-photon sources. We report an experimental quantification of the brightness, radiative decay rate, nonradiative decay rate and…
A central goal in quantum information science is to efficiently interface photons with single optical modes for quantum networking and distributed quantum computing. Here, we introduce and experimentally demonstrate a compact and efficient…
We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the…
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions,…
Control over the charge states of color centers in solids is necessary in order to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-bandgap semiconductors are complex, and much…
A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as…
Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed…