We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per μm3 and moderate coherence time (T2=5μs) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to 100mm it offers the opportunity to up-scale diamond-based device fabrication.
@article{arxiv.1810.09350,
title = {Towards wafer-scale diamond nano- and quantum technologies},
author = {Richard Nelz and Johannes Görlitz and Dennis Herrmann and Abdallah Slablab and Michel Challier and Mariusz Radtke and Martin Fischer and Stefan Gsell and Matthias Schreck and Christoph Becher and Elke Neu},
journal= {arXiv preprint arXiv:1810.09350},
year = {2018}
}