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相关论文: Correlation-driven Lifshitz transition at the emer…

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We establish that a doping-driven first-order metal-to-metal transition, from a pseudogap metal to Fermi Liquid, can occur in correlated quantum materials. Our result is based on the exact Dynamical Mean Field Theory solution of the Dimer…

强关联电子 · 物理学 2021-09-15 L. Fratino , S. Bag , A. Camjayi , M. Civelli , M. J. Rozenberg

We study the behavior of the density of states and the $B_{1g}$ nematic susceptibility extracted from Raman response data across the doping-driven Lifshitz transition comparing the weak and strong interaction cases. Our results were…

强关联电子 · 物理学 2025-12-22 Maria C. O. Aguiar , Helena Bragança , Indranil Paul , Marcello Civelli

We study the Mott transition in a frustrated Hubbard model with next-nearest neighbor hopping at half-filling. The interplay between interaction, dimensionality and geometric frustration closes the one-dimensional Mott gap and gives rise to…

强关联电子 · 物理学 2012-09-19 Marcin Raczkowski , Fakher F. Assaad

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

We study the evolution of a Mott-Hubbard insulator into a correlated metal upon doping in the two-dimensional Hubbard model using the Cellular Dynamical Mean Field Theory. Short-range spin correlations create two additional bands apart from…

强关联电子 · 物理学 2016-08-16 B. Kyung , S. S. Kancharla , D. Sénéchal , A. -M. S. Tremblay , M. Civelli , G. Kotliar

Fermi surface is at the heart of our understanding of metals and strongly correlated many-body systems. An abrupt change in the Fermi surface topology, also called Lifshitz transition, can lead to the emergence of fascinating phenomena like…

Filling-control metal-insulator transition on the two-dimensional Hubbard model is investigated by using the correlator projection method, which takes into account momentum dependence of the free energy beyond the dynamical mean-field…

强关联电子 · 物理学 2007-05-23 Kota Hanasaki , Masatoshi Imada

Twisted transition metal dichalcogenides are a new platform for realizing strongly correlated physics with high tunability. Recent transport experiments [A. Ghiotto et al. Nature 597, 345 (2021)] have reported the bandwidth-driven evolution…

强关联电子 · 物理学 2026-01-08 Yong-Yue Zong , Zhao-Long Gu , Jian-Xin Li

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator…

强关联电子 · 物理学 2007-08-15 M. Civelli , M. Capone , S. S. Kancharla , O. Parcollet , G. Kotliar

The recently proposed center-focused post-processing procedure [Phys. Rev. Research 2, 033476 (2020)] of cellular dynamical mean-field theory suggests that central sites of large impurity clusters are closer to the exact solution of the…

An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…

强关联电子 · 物理学 2012-08-02 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

The underlying Fermi surface is a key concept for strongly-interacting electron models and has been introduced to generalize the usual notion of the Fermi surface to generic (superconducting or insulating) systems. By using improved…

强关联电子 · 物理学 2013-05-30 Luca F. Tocchio , Federico Becca , Claudius Gros

One of the distinctive features of hole-doped cuprate superconductors is the onset of a `pseudogap' below a temperature $T^*$. Recent experiments suggest that there may be a connection between the existence of the pseudogap and the topology…

We solve by Dynamical Mean Field Theory a toy-model which has a phase diagram strikingly similar to that of high $T_c$ superconductors: a bell-shaped superconducting region adjacent the Mott insulator and a normal phase that evolves from a…

超导电性 · 物理学 2008-03-24 Marco Schiro' , Massimo Capone , Michele Fabrizio , Claudio Castellani

We study by dynamical mean field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band…

强关联电子 · 物理学 2018-07-11 Francesco Grandi , Adriano Amaricci , Massimo Capone , Michele Fabrizio

We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…

强关联电子 · 物理学 2014-08-19 Yuki Yanagi , Kazuo Ueda

The four-site DCA method of including intersite correlations in the dynamical mean field theory is used to investigate the metal-insulator transition in the Hubbard model. At half filling a gap-opening transition is found to occur as the…

强关联电子 · 物理学 2008-11-11 Emanuel Gull , Philipp Werner , Xin Wang , Matthias Troyer , A. J. Millis

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

强关联电子 · 物理学 2022-12-06 Yueqi Li , Lingyu Tian , Tianxing Ma , Hai-Qing Lin

Tools of quantum information theory offer a new perspective to characterize phases and phase transitions in interacting many-body quantum systems. The Hubbard model is the archetypal model of such systems and can explain rich phenomena of…

强关联电子 · 物理学 2020-11-10 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

We investigate the strong correlation effect in the spinless electron-hole two-band Hubbard model using the dynamical mean-field theory. At half filling, both the renormalization factor $Z$ and the number of conduction electrons (valence…

强关联电子 · 物理学 2026-05-26 Masashi Akiyama , Yusuke Inokuma , Yoshiaki Ono
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