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相关论文: Correlation-driven Lifshitz transition at the emer…

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We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the…

强关联电子 · 物理学 2009-11-13 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

Understanding doped Mott insulators is a fundamental goal in condensed matter physics, with relevance to cuprate superconductors and other quantum materials. The doped Hubbard model minimally describes such systems, and has explicated some…

We study the magnetic field driven metal-to-insulator transition in half-filled Hubbard model on the Bethe lattice, using the dynamical mean-field theory by solving the quantum impurity problem with density-matrix renormalization group…

强关联电子 · 物理学 2017-09-13 W. Zhu , D. N. Sheng , Jian-Xin Zhu

We study the normal-state, doping-driven phase diagram of the square-lattice Hubbard model using the dynamical cluster approximation combined with the numerical renormalization group as a cluster solver, which gives direct access to…

强关联电子 · 物理学 2026-05-15 Mathias Pelz , Gabriel Kotliar , Jan von Delft , Andreas Gleis

We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to…

强关联电子 · 物理学 2014-08-15 Rubem Mondaini , Thereza Paiva

The phase diagrams of quasi two-dimensional organic superconductors display a plethora of fundamental phenomena associated with strong electron correlations, such as unconventional superconductivity, metal-insulator transitions, frustrated…

强关联电子 · 物理学 2024-10-01 Henri Menke , Marcel Klett , Kazushi Kanoda , Antoine Georges , Michel Ferrero , Thomas Schäfer

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

The topology of the Fermi surface of an extended $d-p$ Hubbard model is investigated using the Green's function technique in a n-pole approximation. The effects of the $d-p$ hybridization on the Fermi surface are the main focus in the…

强关联电子 · 物理学 2020-02-17 D. M. Lalis , E. J. Calegari , L. C. Prauchner , S. G. Magalhaes

We generalize the dynamical-mean field (DMFT) approximation by including into the DMFT equations some length scale via a momentum dependent ``external'' self-energy S(k). This external self-energy describes non-local dynamical correlations…

强关联电子 · 物理学 2009-11-11 M. V. Sadovskii , I. A. Nekrasov , E. Z. Kuchinskii , Th. Pruschke , V. I. Anisimov

We report a fine tuned doping study of strongly overdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ single crystals using electronic Raman scattering. Combined with theoretical calculations, we show that the doping, at which the normal state…

In correlated electron systems the metallic character of a material can be strongly suppressed near an integer concentration of conduction electrons as Coulomb interactions forbid the double occupancy of local atomic orbitals. While the…

强关联电子 · 物理学 2021-05-19 Katherine Driscoll , Arnaud Ralko , Simone Fratini

Since the discovery of the pseudogap and Fermi arc states in underdoped cuprates, the understanding of such non-Fermi-liquid states and the associated violation of Luttinger's theorem have been the central theme in correlated electron…

强关联电子 · 物理学 2021-04-30 Chuang Chen , Tian Yuan , Yang Qi , Zi Yang Meng

We present a cluster dynamical mean-field treatment of the Hubbard model on a square lattice to study the evolution of magnetism and quasiparticle properties as the electron filling and interaction strength are varied. Our approach for…

强关联电子 · 物理学 2009-11-10 E. C. Carter , A. J. Schofield

The properties of a phase with large correlation length can be strongly influenced by the underlying normal phase. We illustrate this by studying the half-filled two-dimensional Hubbard model using cellular dynamical mean-field theory with…

强关联电子 · 物理学 2017-06-14 L. Fratino , P. Sémon , M. Charlebois , G. Sordi , A. -M. S. Tremblay

Anisotropic dipole-dipole interactions between ultracold dipolar fermions break the symmetry of the Fermi surface and thereby deform it. Here we demonstrate that such a Fermi surface deformation induces a topological phase transition --…

量子气体 · 物理学 2016-05-25 E. G. C. P. van Loon , M. I. Katsnelson , L. Chomaz , M. Lemeshko

Spectral functions are evaluated numerically within the t-t'-J model as relevant for electron-doped cuprates. The Fermi surface develops from a pocket-like into a large one with doping. The corresponding pseudogap in the nodal direction is…

强关联电子 · 物理学 2007-07-31 M. M. Zemljic , P. Prelovsek , T. Tohyama

The electronic structure and phase stability of paramagnetic FeSe is computed by using a combination of ab initio methods for calculating band structure and dynamical mean-field theory. Our results reveal a topological change (Lifshitz…

强关联电子 · 物理学 2015-09-18 I. Leonov , S. L. Skornyakov , V. I. Anisimov , D. Vollhardt

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

We study the doping evolution of the electronic structure in the normal phase of high-$T_c$ cuprates. Electronic structure and Fermi surface of cuprates with single CuO$_2$ layer in the unit cell like La$_{2-x}$Sr$_x$CuO$_4$ have been…

强关联电子 · 物理学 2011-06-22 S. G. Ovchinnikov , M. M. Korshunov , E. I. Shneyder

Using large-scale dynamical cluster quantum Monte Carlo simulations, we study the Lifshitz transition of the two dimensional Hubbard model with next-nearest-neighbor hopping ($t'$), chemical potential and temperature as control parameters.…

强关联电子 · 物理学 2012-11-05 Kuang-Shing Chen , Zi Yang Meng , Thomas Pruschke , Juana Moreno , Mark Jarrell