相关论文: Reduced Low Dose Rate Sensitivity and its Mechanis…

Dielectronic recombination (DR) of few-electron ions has evolved into a sensitive spectroscopic tool for highly charged ions. This is due to technological advances in electron-beam preparation and ion-beam cooling techniques at heavy-ion…

Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this…

The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestic were investigated under the dose rate of 800mGy(Si)/s and 1.3mGy(Si)/s with Co-60 gamma…

Similar to the enhanced low-dose-rate sensitivity (ELDRS) effect of ionization damage, an enhanced low-flux senstivity (ELFS) effect has been reported in ions/neutron irradiation on n-type silicon or PNP transistors. However, the existing…

We develop a quantitative model of ionization processes in biological tissues under Ultra High Dose Rate (UHDR) radiation. The underlying conjecture is that of electron-hole liquid (EHL) forming in water based substances of biological…

We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output…

Superconducting resonators are widely used in many applications such as qubit readout for quantum computing, and kinetic inductance detectors. These resonators are susceptible to numerous loss and noise mechanisms, especially the…

We extend the recently proposed mechanism for inducing low energy nuclear reactions (LENRs) to a crystal lattice. The process gets a dominant contribution at second order in quantum perturbation theory. The tunnelling barrier is evaded due…

This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the…

The original Shockley-Read-Hall recombination statistics is extended to include recombination of localized excitations. The recombination is treated as a bimolecular process rather than a monomolecular recombination of excitons. The…

The direct variational optimization of the two-electron reduced density matrix (2RDM) can provide a reference-independent description of the electronic structure of many-electron systems that naturally captures strong or nondynamic…

In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon…

The radiative recombination of electron-hole pairs represents a great challenge to the photon-to-charge efficiency in photocell. In this paper, we visit the radiative recombination rate (RRR) in a quantum photocell with or without three…

Little Red Dots (LRDs) are a new class of compact extragalactic objects, with a v-shaped optical spectral energy distribution breaking close to the Balmer break wavelength, and broad, typically exponentially-shaped lines. They are believed…

Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly…

Basing on 2D computer simulation of physical processes in high-voltage reversibly-switched dynistors (RSD) important peculiarities of their submicrosecond pulse performance mechanisms have been studied. It is characteristic that on early…

The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the…

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…

We calculate the tunneling density of states (TDOS) in a three wire junction of interacting spin-1/2 electrons, and find an anomalous enhancement of the TDOS in the zero bias limit, even for repulsive interactions for several bosonic fixed…

Electron-electron interactions generally reduce the low temperature resistivity due to the screening of the impurity potential by the electron gas. In the weak-coupling limit, the magnitude of this screening effect is determined by the…