相关论文: Time resolution of silicon pixel sensors

In this paper we study the identification of a time-varying linear system from its response to a known input signal. More specifically, we consider systems whose response to the input signal is given by a weighted superposition of delayed…

We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…

Synchrotron radiation light sources produce intense beam of X-ray with ultra-short pulse and nanosecond period. This of-fers the opportunities for the time resolution experiments. Achieving higher counting rate and faster arriving time is…

This paper describes the measurements of energy and time response and resolution of a 3 x 3 array made of undoped CsI crystals coupled to large area Hamamatsu Multi Pixel Photon Counters. The measurements have been performed using the…

Large Area Picosecond PhotoDetectors (LAPPDs) are photosensors based on microchannel plate technology with about 400 cm$^2$ sensitive area. The external readout plane of a capacitively coupled LAPPD can be segmented into pads providing a…

We present the first prototype of a novel thermal neutron detector using the time projection method. The system consists of 8 TimePix ASICS with postprocessed InGrid meshes. Each ASIC has 256 x 256 pixels of 55 mum x 55mum in size with the…

We present time-resolved X-ray diffraction measurements using advanced timing schemes that provide high temporal resolution while also maintaining a high flux in the X-ray probe beam. The method employs patterned probe pulse sequences that…

This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements…

In Charge Coupled Device (CCD) detectors the electrons excited upon absorption of a single x-ray photon quickly diffuse and generate charge-spots often larger than pixel dimensions. In the soft x-ray range this phenomenon drastically limits…

The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche…

For the High-Luminosity (HL-LHC) phase, the upgrade of the Compact Muon Solenoid (CMS) experiment at CERN will include a novel MIP Timing Detector (MTD). The central part of MTD, the barrel timing layer (BTL), is designed to provide a…

A characterisation of the Timepix4 pixel front-end with a strong focus on timing performance is presented. Externally generated test pulses were used to probe the per-pixel time-to-digital converter (TDC) and measure the time-bin sizes by…

The temporal resolution of Low-Gain Avalanche Detectors (LGADs), also known as Ultra-Fast Silicon Detectors (UFSDs), is governed by two contributions: jitter, arising from electronic noise and signal slew rate, and the Landau noise term,…

A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50…

Two-photon absorption (TPA) enables three-dimensional characterisation of silicon detectors by generating charge carriers within a confined volume around a focused laser spot. In combination with pixelated readout systems, TPA measurements…

A comprehensive study of the spatial resolution and detection efficiency of sensor prototypes developed for the LHCb VELO upgrade is presented. Data samples were collected at the CERN SPS H8 beam line using a hadron mixture of protons and…

Time-resolved photoconductivity is widely used to characterize non-equilibrium charge-carrier lifetime, impurity content, and solar cell efficiency in a broad range of semiconductors. Most measurements are limited to the detection of…

To meet high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially operate in radiation harsh and room temperature environment because of its high…

The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses…

Precision timing has alway been a prominent topic in the instrumentation for high-energy physics experiments. In this document I discuss what the perspectives are for the use of silicon sensors for a time-of-flight detector in a…