相关论文: Valley Edelstein Effect in Monolayer Transition Me…
The Magnetoelectric (ME) effect in solids is a prominent cross correlation phenomenon, in which the electric field (${\bm E}$) controls the magnetization (${\bm M}$) and the magnetic field (${\bm H}$) controls the electric polarization…
Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic…
The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hopping in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy…
Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose…
Transition metal dichalcogenide (TMDC) monolayers are newly discovered semiconductors for a wide range of applications in electronics and optoelectronics. Most studies have focused on binary monolayers that share common properties: direct…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
Spin-orbit coupling in systems with broken inversion symmetry gives rise to the Edelstein effect, which is the induced spin polarization in response to an applied electric field or current, and the inverse Edelstein effect, which is the…
We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…
For applications exploiting the valley pseudospin degree of freedom in transition metal dichalcogenide monolayers, efficient preparation of electrons or holes in a single valley is essential. Here, we show that a magnetic field of 7 Tesla…
Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and…
Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several…
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D…
We have systematically examined the circular polarization of monolayer WSe2 at different temperature, excitation energy and exciton density. The valley depolarization in WSe2 is experimentally confirmed to be governed by the intervalley…
Stable and remarkable valley polarization effect is the key to utilizing valley degree of freedom in valleytronic devices. According to first-principles calculations and symmetry analysis, we reveal that valley polarization effect in…
We report the measurement of spin current induced charge accumulation, the inverse Edelstein effect (IEE), on the surface of a candidate topological Kondo insulator SmB6 single crystal. Robust surface conduction channel of SmB6 has been…
We propose and analyze a mechanism for inducing spin Hall currents in ordinary (1H phase) monolayer transition metal dichalcogenides (TMDs) due to the nonlinear process of optical rectification. The photo-induced spin current is…
Recently, the topological flat bands and spin Hall effect have been experimentally observed in the AB-stacked MoTe$_2$/WSe$_2$ heterostructures. In this work, we systematically study the Berry curvature effects in moir\'{e} transition metal…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and…
We study the refraction effect of electronic wave in hole-doped lateral heterojunctions of metallic and semiconducting transition-metal dichalcogenide monolayers. This effect is theoretically investigated in 2$H$-type MoSe$_2$-NbS$_2$ and…