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This work analyzes the emission and radiation properties of a single optical emitter embedded in a graphene-coated subwavelength wire. We discuss the modifications of the spontaneous emission rate and the radiation efficiency as a function…

光学 · 物理学 2017-08-23 Mauro Cuevas

Recent optical conductivity experiments of doped graphene in the infrared regime reveal a strong background in the energy region between the intra and interband transitions difficult to explain within conventional pictures. We propose a…

材料科学 · 物理学 2013-05-29 Adolfo G. Grushin , Belen Valenzuela , Maria A. H. Vozmediano

We demonstrate the strong coupling of a quantum dot and a graphene spherical shell coating it. Our simulations are the exact solutions of 3D Maxwell equations. Interaction produces sharp hybrid modes, even when the two are off-resonant,…

Here, we present a mechanism for tailoring the photonic band structure of a quarter-wave stack without changing its physical periods by embedding conductive sheets. Graphene is utilized and studied as a realistic, two-dimensional conductive…

光学 · 物理学 2014-07-31 Yuancheng Fan , Zeyong Wei , Hongqiang Li , Hong Chen , Costas M. Soukoulis

Guided by the analogy to Mie scattering of light on small particles we show that the propagation of a Dirac-electron wave in graphene can be manipulated by a circular gated region acting as a quatum dot. Large dots enable electron lensing,…

介观与纳米尺度物理 · 物理学 2015-06-12 R. L. Heinisch , F. X. Bronold , H. Fehske

In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…

介观与纳米尺度物理 · 物理学 2013-01-07 Pei Zhao , Randall M. Feenstra , Gong Gu , Debdeep Jena

Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic…

介观与纳米尺度物理 · 物理学 2022-03-18 Ondrej Dyck , Jacob L. Swett , Charalambos Evangeli , Andrew R. Lupini , Jan A. Mol , Stephen Jesse

Highly-doped graphene samples show the conductance reduced and the shot-noise power enhanced compared to standard ballistic systems in two-dimensional electron gas. These features can be understood within a model assuming incoherent…

介观与纳米尺度物理 · 物理学 2024-06-25 Adam Rycerz , Katarzyna Rycerz , Piotr Witkowski

The Goos-Hanchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift sigma of the reflected beam along the interface. We show that the GH effect at a p-n interface in graphene depends on…

介观与纳米尺度物理 · 物理学 2009-04-10 C. W. J. Beenakker , R. A. Sepkhanov , A. R. Akhmerov , J. Tworzydlo

Graphene quantum dots (QDs) are intensively studied as platforms for the next generation of quantum electronic devices. Fine tuning of the transport properties in monolayer graphene QDs, in particular with respect to the independent…

The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…

A novel type of photonic crystal formed by embedding a periodic array of constituent stacks of alternating graphene and dielectric discs into a background dielectric medium is proposed. The photonic band structure and transmittance of such…

介观与纳米尺度物理 · 物理学 2010-12-21 Oleg L. Berman , Vladimir S. Boyko , Roman Ya. Kezerashvili , Anton A. Kolesnikov , Yurii E. Lozovik

We demonstrate a scanning gate grid measurement technique consisting in measuring the conductance of a quantum point contact (QPC) as a function of gate voltage at each tip position. Unlike conventional scanning gate experiments, it allows…

介观与纳米尺度物理 · 物理学 2016-03-01 A. A. Kozikov , R. Steinacher , C. Rössler , T. Ihn , K. Ensslin , C. Reichl , W. Wegscheider

Graphene is the first example of truly two-dimensional crystals - it's just one layer of carbon atoms. It turns out to be a gapless semiconductor with unique electronic properties resulting from the fact that charge carriers in graphene…

介观与纳米尺度物理 · 物理学 2011-11-09 M. I. Katsnelson , K. S. Novoselov

We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…

We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than…

III-Nitride light emitting diodes (LEDs) are the backbone of ubiquitous lighting and display applications. Imparting directional emission is an essential requirement for many LED implementations. Although optical packaging, nano-patterning…

The optical properties of graphene (Gr)-covered CsPbBr$_3$ quantum dots (QDs) were investigated using micro-photoluminescence spectroscopy, revealing a remarkable three-orders-of-magnitude enhancement in photoluminescence (PL) intensity…

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

介观与纳米尺度物理 · 物理学 2016-02-19 N. C. S. Vieira , J. Borme , G. Machado , F. Cerqueira , P. P. Freitas , V. Zucolotto , N. M. R. Peres , P. Alpuim

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…