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We distinguish three mechanisms of doping graphene. Density functional theory is used to show that electronegative molecule like F4-TCNQ and electropositive metals like K dope graphene p- and n-type respectively. These dopants are expected…

材料科学 · 物理学 2015-05-18 H. Pinto , R. Jones , J. P. Goss , P. R. Briddon

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while…

材料科学 · 物理学 2009-11-13 G. Giovannetti , P. A. Khomyakov , G. Brocks , V. M. Karpan , J. van den Brink , P. J. Kelly

By employing x-ray photoelectron spectroscopy (XPS), we have been able to establish the occurrence of charge-transfer doping in few-layer graphene covered with electron acceptor (TCNE) and donor (TTF) molecules. We have performed…

材料科学 · 物理学 2015-06-04 D. Choudhury , B. Das , D. D. Sarma , C. N. R. Rao

Using density-functional calculations, we show that electron or hole doped graphene can strongly change the mobility of adsorbed atoms H and O. Interestingly, charge doping affects the diffusion of H and O in the opposite way, namely,…

计算物理 · 物理学 2016-08-04 Manh-Thuong Nguyen , Pham Nam Phong

The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated…

材料科学 · 物理学 2010-10-25 A. A. Kaverzin , S. M. Strawbridge , A. S. Price , F. Withers , A. K. Savchenko , D. W. Horsell

We study the effects of metallic doping on the electronic properties of graphene using density functional theory in the local density approximation in the presence of a local charging energy (LDA+U). The electronic properties are sensitive…

材料科学 · 物理学 2009-11-13 B. Uchoa , C. -Y. Lin , A. H. Castro Neto

Chemical functionalization of graphene modifies the local electron density of the carbon atoms and hence electron transport. Measuring these changes allows for a closer understanding of the chemical interaction and the influence of…

介观与纳米尺度物理 · 物理学 2010-12-17 A. Jacobsen , F. M. Koehler , W. J. Stark , K. Ensslin

Graphene is known as the strongest 2D material in nature, yet we show that moderate charge doping of either electrons or holes can further enhance its ideal strength by up to ~17%, based on first principles calculations. This unusual…

材料科学 · 物理学 2015-06-11 Chen Si , Wenhui Duan , Zheng Liu , Feng Liu

Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming…

介观与纳米尺度物理 · 物理学 2011-07-26 Bing Huang , Hongjun Xiang , Su-Huai Wei

Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density…

材料科学 · 物理学 2015-05-13 P. A. Khomyakov , G. Giovannetti , P. C. Rusu , G. Brocks , J. van den Brink , P. J. Kelly

Dopants positioned near edges in nanostructured graphene behave differently from bulk dopants. Most notable, the amount of charge transferred to delocalized states (i.e. doping efficiency) depends on position as well as edge chirality. We…

介观与纳米尺度物理 · 物理学 2015-06-24 Thomas Garm Pedersen

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

材料科学 · 物理学 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary…

介观与纳米尺度物理 · 物理学 2019-07-03 G. I. Zebrev , S. A. Shostachenko

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent…

介观与纳米尺度物理 · 物理学 2011-07-26 Yijian Ouyang , Stefano Sanvito , Jing Guo

Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one…

介观与纳米尺度物理 · 物理学 2012-09-25 Pooja Rani , V. K. Jindal

The enhanced photocatalytic performance of doped graphene(GR)/semiconductor nanocomposites have recently been widely observed, but an understanding of the underlying mechanisms behind it is still out of reach. As a model system to study the…

计算物理 · 物理学 2015-10-29 Chao-Ni He , Wei-Qing Huang , Liang Xu , Yin-Cai Yang , Bing-Xin Zhou , Gui-Fang Huang , P. Peng , Wu-Ming Liu

The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or…

介观与纳米尺度物理 · 物理学 2020-09-29 Sam Vaziri , Victoria Chen , Lili Cai , Yue Jiang , Michelle Chen , Ryan Grady , Xiaolin Zheng , Eric Pop

Using first-principles density functional theory calculations, we investigate the geometries, electronic structures, and thermodynamic stabilities of substitutionally doped phosphorene sheets with group III, IV, V, and VI elements. We find…

计算物理 · 物理学 2016-03-17 Weiyang Yu , Zhili Zhu , Chun-Yao Niu , Chong Li , Jun-Hyung Cho , Yu Jia

Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped…

介观与纳米尺度物理 · 物理学 2014-02-25 T. P. Kaloni , R. P. Joshi , N. P. Adhikari , U. Schwingenschlögl

We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are…

材料科学 · 物理学 2009-03-03 Blanca Biel , X. Blase , François Triozon , Stephan Roche
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