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Quasi one dimensional materials provide a compelling platform where reduced dimensionality stabilizes intertwined topological and superconducting phases. Here we report superconductivity in a new Bi based quasi 1D compound, PtPb3Bi, which…

Silicon (Si) is one of the most extensively studied materials owing to its significance to semiconductor science and technology. While efforts to find a new three-dimensional (3D) Si crystal with unusual properties have made some progress,…

材料科学 · 物理学 2018-02-23 Kisung Chae , Duck Young Kim , Young-Woo Son

Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising…

介观与纳米尺度物理 · 物理学 2022-05-17 H. J. Hu , W. L. Zhen , S. R. Weng , Y. D. Li , R. Niu , Z. L. Yue , F. Xu , L. Pi , C. J. Zhang , W. K. Zhu

Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling. Thus far, atomically-thin p-n…

2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…

Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…

介观与纳米尺度物理 · 物理学 2024-12-17 Keshari Nandan , Ateeb Naseer , Amit Agarwal , Somnath Bhowmick , Yogesh S. Chauhan

Atomically thin group-VIB transition metal dichalcogenides (TMDs) have recently emerged as a new class of two-dimensional (2D) semiconductors with extraordinary properties including the direct band gap in the visible frequency range, the…

介观与纳米尺度物理 · 物理学 2015-12-08 Gui-Bin Liu , Di Xiao , Yugui Yao , Xiaodong Xu , Wang Yao

Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating…

Materials with reduced dimensionality offer beneficial density-of-states (DOS) profiles for thermoelectric energy conversion, but can be impractical in realistic devices. Encouragingly, bulk high-symmetry materials can also exhibit similar…

材料科学 · 物理学 2026-03-10 Øven A. Grimenes , Ole M. Løvvik , Kristian Berland

The emergence of two-dimensional (2D) superconductivity in bulk transition metal dichalcogenides (TMDs) is a fascinating area of research, as their weak interlayer coupling leads to novel superconducting behavior and offers a rich platform…

超导电性 · 物理学 2025-11-04 P. Manna , S. Sharma , T. Agarwal , S. Srivastava , P. Mishra , R. P. Singh

Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have…

材料科学 · 物理学 2016-07-15 Mervin Zhao , Yu Ye , Yimo Han , Yang Xia , Hanyu Zhu , Yuan Wang , David A. Muller , Xiang Zhang

Tin Selenide (SnSe) is one of the best thermoelectric materials reported to date. The possibility of growing few-layer SnSe helped boost the interest in this long-known, earth abundant material. Pristine SnSe in bulk, mono- and few-layer…

材料科学 · 物理学 2017-10-11 Hansika I. Sirikumara , Thushari Jayasekera

Two-dimensional (2D) metal halides have received more attention because of their electronic and optoelectronic properties. Recently, researchers are interested to investigate the thermoelectric properties of metal halide monolayers because…

材料科学 · 物理学 2020-04-30 Atanu Betal , Jayanta Bera , Satyajit Sahu

Lead Selenide (PbSe) is an attractive `IV-VI' semiconductor material to design optical sensors, lasers and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The…

介观与纳米尺度物理 · 物理学 2015-05-27 Abhijeet Paul , Gerhard Klimeck

Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially…

介观与纳米尺度物理 · 物理学 2020-06-30 Cedric Klinkert , Áron Szabó , Christian Stieger , Davide Campi , Nicola Marzari , Mathieu Luisier

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…

Two-dimensional (2D) group V elemental materials have attracted widespread attention due to their nonzero band gap while displaying high electron mobility. Using first-principles calculations, we propose a series of new elemental bilayers…

材料科学 · 物理学 2017-07-19 Xiangru Kong , Linyang Li , Ortwin Leenaerts , Xiong-jun Liu , François M. Peeters

Topological phases, especially topological crystalline insulators (TCIs), have been intensively explored observed experimentally in three-dimensional (3D) materials. However, the two-dimensional (2D) films are explored much less than 3D…

We report a comprehensive first-principles study of the electronic and optical properties of recently identified exfoliable one-dimensional semiconducting materials, focusing on chalcogenide-based atomic chains derived from van der…

Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled…

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