相关论文: Material developments and domain wall based nanose…
Nanoscale magnetic junction provides a useful approach to act as the building block for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain…
We present the results of experimental investigations of magnetic switching and magnetotransport in a new generation of magnetic devices containing artificially patterned domains. Our devices are realised by locally reducing the coercive…
The pivotal role of magnetic anisotropy in stabilising two-dimensional (2D) magnetism has been widely accepted, however, direct correlation between magnetic anisotropy and long-range magnetic ordering in the 2D limit is yet to be explored.…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
In (S/F) hybrids the suppression of superconductivity by the exchange field h_ex of the ferromagnet can be partially lifted when different directions of h_ex are sampled simultaneously by the Cooper pair. In F/S/F trilayer geometries where…
Interfaces in FeCoB/MgO/FeCoB magnetic tunnel junction play a vital role in controlling their magnetic and transport properties for various applications in spintronics and magnetic recording media. In this work, interface structures of a…
Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared…
The effects of rhenium doping in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations…
A keen interest towards technological implications of spin-orbit driven magnetization dynamics requests a proper theoretical description, especially in the context of a microscopic framework, to be developed. Indeed, magnetization dynamics…
This work reports back-end-of-line (BEOL) compatible, thin-film transistors (TFTs) with sub-10 nm tungsten-doped tin oxide (TWO) channels deposited by atomic layer deposition (ALD) at 150 $^\circ$C. TFTs with undoped SnO$_{\mathrm{x}}$,…
Hafnium dioxide (HfO2) is a promising ferroelectric (FE) material for achieving high-density nonvolatile memory and neuromorphic computing, due to its compatibility with the mainstream integrated circuit technology and the surprisingly…
A method for the calculations of the Gilbert damping parameter $\alpha$ is presented, which based on the linear response formalism, has been implemented within the fully relativistic Korringa-Kohn-Rostoker band structure method in…
The current-driven motion of a domain wall (DW) in a ferromagnet with many Bloch lines (BLs) via the spin transfer torque is studied theoretically. It is found that the motion of BLs changes the current-velocity ($j$-$v$) characteristic…
The spin-transfer torque motion of magnetic domain walls (DWs) in a CoB/Ni-based nanowire driven by a low current density of (1.12\pm0.8)\times10^{11} A m^{-2} has been observed indirectly by magnetotransport measurements. A high DW…
The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…
Domain wall bimerons (DWBMs) are nanoscale spin textures residing within the magnetic domain walls of in-plane magnets. In this study, we employ both numerical and analytical methods to explore the stabilization of N\'eel-type domain wall…
Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism only occurs under certain conditions which have not been…
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…
Comprehensive control of the domain wall nucleation process is crucial for spin-based emerging technologies ranging from random-access and storage-class memories over domain-wall logic concepts to nanomagnetic logic. In this work, focused…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…