相关论文: Material developments and domain wall based nanose…

The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…

Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units. To achieve deeper technological…

We experimentally explore the phenomenon of electron tunneling across a modulated tunneling barrier which is created between an STM tip and an Au film deposited on a vibrating piezo surface. Measurements of the time series of the quantum…

We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching…

Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…

We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…

We investigated the performance of spin transfer torque random access memory (STT-RAM) cell with cross shaped Heusler compound based free layer using micromagnetic simulations. We designed the free layer using Cobalt based Heusler…

Gilbert damping is a key property governing magnetization dynamics in ordered magnets. We present a theoretical study of intrinsic Gilbert damping induced by magnon decay in antiferromagnetic metals through $s$-$d$ exchange interaction. Our…

Phenomenological approach is developed in the theory of spin-valve type ferromagnetic junctions to describe exchange switching by current flowing perpendicular to interfaces. Forward and backward current switching effects are described and…

Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing…

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…

The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of…

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood…

We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included non-perturbatively. In the clean limit, the spin-pumping from the localized d-electrons to the…

We investigate the enhancement of Gilbert damping at 2DHG/ferromagnetic insulator (FI) interfaces, where spin pumping from the FI layer injects spins into the 2DHG, and cubic Rashba spin-orbit coupling (RSOC) significantly boosts spin…

We investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider Cr2O3/Co/Pt trilayers as model system, in which…

The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…

One essential feature in MRAM cells is the spin torque efficiency, which describes the ratio of the critical switching current to the energy barrier. Within this paper it is reported that the spin torque efficiency can be improved by a…

Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…

The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…