相关论文: Extent of Variation Resilience in Strained CMOS: F…

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…

The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and…

Field-effect transistors (FETs) based on 2D materials have already reached the stage of trial FAB integration. However, reliability limitations caused by various defects present a serious obstacle for their smooth way forward, especially…

Strain engineering is a powerful strategy for controlling the structural and electronic properties of two-dimensional materials, particularly in systems hosting charge density wave (CDW) order. In this work, we apply uniaxial tensile and…

In this article, we proposed a Variable threshold MOSFET(VTMOS)approach which is realized from Dynamic Threshold MOSFET(DTMOS), suitable for sub-threshold digital circuit operation. Basically the principle of sub- threshold logics is…

Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also…

Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate…

Bias Temperature Instability (BTI) is a major reliability concern in CMOS technology, especially with High dielectric constant (High-\k{appa}/HK) metal gate (MG) transistors. In addition, the time independent process induced variation has…

One of the major barriers that CMOS devices face at nanometer scale is increasing parameter variation due to manufacturing imperfections. Process variations severely inhibit the reliable operation of circuits, as the operational frequency…

Due to the significant process variations, designers have to optimize the statistical performance distribution of nano-scale IC design in most cases. This problem has been investigated for decades under the formulation of stochastic…

With the increasing digital services demand, performance and power-efficiency become vital requirements for digital circuits and systems. However, the enabling CMOS technology scaling has been facing significant challenges of device…

Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single electron transistor and coherent tunneling of electrons through a single level in the dot has been studied. We have found that…

Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and…

Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron…

In superconductors with relatively low superfluid density, such as cuprate high-$T_c$ superconductors, the phase fluctuations of the superconducting order parameter are remarkable, presumably playing a nonnegligible role in shaping many…

Memristive systems, namely resistive systems with memory, are attracting considerable attention due to their ubiquity in several phenomena and technological applications. Here, we show that even the simplest one-dimensional network formed…

The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer era many problems related to leakage currents and other…

Negative extensibility refers to the category of mechanical metamaterials having an unusual phenomenon where the system contracts upon expansion. The dynamic analysis of such systems is crucial for exploring the vibration isolation…

As CMOS technology scales down, thermal fluctuations increasingly impact circuit behavior, posing challenges to conventional circuit design. However, the inherent stochasticity introduced by thermal noise is now being explored as a…