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We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the…
Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…
Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is…
Free-standing Bi$_2$Se$_3$ single crystal flakes of variable thickness are grown using a catalyst-free vapor-solid synthesis and are subsequently transferred onto a clean Si$^{++}$/SiO$_2$ substrate where the flakes are contacted in Hall…
Much effort has been devoted to the electronic properties of relatively thick ZrTe5 crystals, focusing on their three-dimensional topological effects. Thin ZrTe5 crystals, on the other hand, were much less explored experimentally. Here we…
We present a device architecture of hybrid-edge and dual-gated quantum point contact. We demonstrate improved electrostatic control over the separation, position, and coupling of each broken-symmetry compressible strip in graphene. Via…
The temperature dependence of the band gap is crucial to a semiconductor. Bulk black phosphorus (BP) is known to exhibit an anomalous behavior. Through optical spectroscopy, here we show that the temperature effect on BP band gap gradually…
We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems.…
The hopping transport of charge carries in 3-dimensional disordered semiconductors is analyzed in this work. It is assumed that the density of localized states is a decreasing function of energy and contribution of thermoactivated jumps…
We investigate integer and fractional quantum Hall states in quantum point contacts (QPCs) of different geometries, defined in AlGaAs/GaAs heterostructures employing different doping and screening techniques. We find that, even in the…
We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…
Photoinduced topological phase transitions (TPTs) in black phosphorous (BP) under compressive strain were investigated by combining Floquet theory and first-principles calculations. Intriguing photo-dressed electronic states including…
We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
Organic water-gated thin-film transistors (WG-TFTs) are of great interest in developing low-cost and high-performance biosensors. The device's sensitivity to changes in measurement conditions can impair long-term operation, and care must be…
Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order…
We demonstrate theoretically the electric tunability due to coalescence of exceptional points in PT-symmetric waveguides bounded by imperfect conductive layers. Owing to the competition effect of multimode interaction, multiple exceptional…
A model of the mean-field interacting boson gas trapped by a weak harmonic potential is considered by the \textit{boson random point fields} methods. We prove that in the Weak Harmonic Trap (WHT) limit there are two phases distinguished by…
The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density…