从反常到正常：二维黑磷带隙的温度依赖性
材料科学
2020-10-13 v1
摘要
带隙的温度依赖性对半导体至关重要。已知块体黑磷（BP）表现出反常行为。通过光学光谱，我们在此表明 BP 带隙的温度效应随层数减少逐渐演化，最终在单层极限转变为正常行为，实现了从反常到正常的跨越。同时，对于相同厚度的样品，温度引起的光学共振偏移也因不同的跃迁指数而不同。综合分析揭示，温度可调的层间耦合是造成所观测多样情形的原因。我们的研究为理解某些层状半导体中的反常温度行为提供了一把钥匙。
引用
@article{arxiv.2010.04901,
title = {From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus},
author = {Shenyang Huang and Fanjie Wang and Guowei Zhang and Chaoyu Song and Yuchen Lei and Qiaoxia Xing and Chong Wang and Yujun Zhang and Jiasheng Zhang and Yuangang Xie and Lei Mu and Chunxiao Cong and Mingyuan Huang and Hugen Yan},
journal= {arXiv preprint arXiv:2010.04901},
year = {2020}
}