相关论文: X-ray Metrology of an Array of Active Edge Pixel S…
Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…
Hybrid pixel single-photon-counting detectors have been successfully employed and widely used in Synchrotron radiation X-ray detection. In this paper, the silicon pixel sensors for single X-ray photon detection, which operate in…
To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the…
Silicon detectors typically require an insensitive area around their periphery to accommodate guard rings, which help maintain the electric field uniformity around edge pixels and isolate the high leakage current from the physical edges of…
While designed primarily for X-ray imaging applications, the Medipix3 ASIC can also be used for charged-particle tracking. In this work, results from a beam test at the CERN SPS with irradiated and non-irradiated sensors are presented and…
The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2-3 mm). This implies the need of slim edges of about 100-200 $\mu$m width for…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
Sensors for particle tracking detectors are required to provide a maximum active area in addition to fulfilling performance criteria concerning radiation hardness, charge collection and operating conditions (e.g. leakage current, depletion…
Hybrid pixel sensor technology such as the Medipix3 represents a unique tool for electron imaging. We have investigated its performance as a direct imaging detector using a Transmission Electron Microscope (TEM) which incorporated a…
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out…
A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$\mu$m. To solidify this concept, the…
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…
We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 $\mu$m thick, produced at VTT…
MuPix11 is a High-Voltage Monolithic Active Pixel Sensor (HV-MAPS) developed for the tracking system of the Mu3e experiment. The in-pixel photon response of a MuPix11 sensor thinned to 70 {\mu}m was measured using an 8 keV X-ray beam with a…
At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to…
Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…
The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
Transition Edge Sensor (TES) spectrometers for hard X-ray beamline science will enable improved X-ray emission and absorption spectroscopy in the information-rich 2 to 20 keV energy range. We are building a TES-based instrument for the…