相关论文: Strain controlled valley filtering in multi-termin…
Introducing quantum confinement has uncovered a rich set of interesting quantum phenomena and allows one to directly probe the physics of confined (quasi-)particles. In most experiments, however, electrostatic potential is the only…
A nanoelectronic device made of twisted bilayer graphene (TBLG) is proposed to steer the direction of the current flow. The ballistic electron current, injected at one edge of the bottom layer, can be guided predominantly to one of the…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
The ability to manipulate electrons with the intense laser pulse enables an unprecedented control over the electronic motion on its intrinsic timescale. Present work explores the desired control of photocurrent generation in monolayer…
We describe a simple setup generating pure valley currents -- valley transport without charge transport -- in strained graphene nanoribbons with zigzag edges. The crucial ingredient is a uniaxial strain pattern which couples to the…
We propose a device in which a sheet of graphene is coupled to a Weyl semimetal, allowing for the physical access to the study of tunneling from two-dimensional to three dimensional massless Dirac fermions. Due to the reconstructed band…
The extreme mechanical resilience of graphene and the peculiar coupling it hosts between lattice and electronic degrees of freedom have spawned a strong impetus towards strain-engineered graphene where, on the one hand, strain augments the…
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moir\'e bands with opposite Chern number…
An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched…
Inner edge state with spin and valley degrees of freedom is a promising candidate to design a dissipationless device due to the topological protection. The central challenge for the application of inner edge state is to generate and…
Recently, the Josephson diode effect (JDE), in which the superconducting critical current magnitudes differ when the currents flow in opposite directions, has attracted great interest. In particular, it was demonstrated that gate-defined…
We theoretically study valley-filtering in pristine graphene irradiated by bicircular counter-rotating laser drive. The dynamical symmetry of the graphene and laser drive disrupts graphene's inversion symmetry, which results distinct…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
Graphene electrons feature a pair of massless Dirac cones of opposite pseudospin chirality at two valleys. Klein tunneling refers to the intriguing capability of these chiral electrons to penetrate through high and wide potential barrier.…
Monolayer Graphene contains two inequivalent local minimum, valleys, located at $K$ and $K'$ in the Brillouin zone. There has been considerable interest in the use of these two valleys as a doublet for information processing. Herein I…
Well established for the visible spectrum gaps of the transition metal dichalcogenide family, valleytronics - the control of valley charge and current by light - is comparatively unexplored for the THz gaps that characterize graphene and…
Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that…
Kelvin probe force microscopy (KPFM) has been employed to probe charge carriers in a graphene/hexagonal boron nitride (hBN) heterostructure [Nano Lett, 21, 5013 (2021)]. We propose an approach for operating valley filtering based on the…
The aim of this work is to describe the electronic properties of graphene in a constant magnetic field in the long wavelength approximation with random binary disorder, by solving the Soven equation self-consistently. Density of state…
This work performs a numerical study of electron transport through the fundamental logic gate in valleytronics - a valley valve consisting of two or increasing number of valley filters. Various typical effects on the transport are…