相关论文: Strain controlled valley filtering in multi-termin…
We demonstrate valley-dependent vortex generation in a photonic graphene. Without breaking the inversion symmetry, excitation of two equivalent valleys leads to formation of an optical vortex upon Bragg-reflection to the third valley, with…
We study the electron transmission through the domain boundary on bilayer graphene separating AB and BA stacking regions. Using the effective continuum model, we calculate the electron transmission probability as a function of the electron…
Strain engineering is a versatile method to boost the carrier mobility of two-dimensional materials-based electronics and optoelectronic devices. In addition, strain is ubiquitous during device fabrication via material deposition on a…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…
The short wavelength of graphene plasmons relative to the light wavelength makes them attractive for applications in optoelectronics and sensing. However, this property limits their coupling to external light and our ability to create and…
Based on the relation between a plane phased array and plane waves we show that a spherical current layer or a current sphere proportional to a multipole electric field and situated in a uniform medium generates the same multipole field in…
Valley polarized topological kink states, existing broadly in the domain wall of hexagonal lattices systems, are identified in experiments, unfortunately, only very limited physical properties being given. Using an Aharanov-Bohm…
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley…
The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the…
Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in…
Valley degree of freedom besides spin is a promising candidate as a carrier of information. Spintronics has come a long way and spin modulation can be realized by quantum interference and spin-orbit coupling effect. However, the control of…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…
Graphene-based electric power generation that converts mechanical energy of flow of ionic droplets over the device surface into electricity has emerged as promising candidate for a blue-energy network. Yet the lack of a microscopic…
Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling…
A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of…
The control and manipulation of the valley and spin degrees of freedom have received great interests in fundamental studies and advanced information technologies. Compared with magnetic means, it is highly desirable to realize more…
Graphene on hBN (G/hBN) has a long period moir\'{e} superstructure owing to the lattice mismatch between two materials. Long periodic potential caused by the moir\'{e} superstructure induces modulation of electronic properties of the…
We show that Floquet engineering with circularly polarized light (CPL) can selectively split the valley degeneracy of a twisted multilayer graphene (TMG), and thus generate a controlled valley-polarized Floquet Chern flat band with tunable…
Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the…
Gapped bilayer graphene can support the presence of intragap states due to kink gate potentials applied to the graphene layers. Electrons in these states display valley-momentum locking, which makes them attractive for topological…