相关论文: The Miniband Alignment Field-Effect Transistor: a …

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…

We propose energy bandpass filtering employed using the idea of anti-reflection heterostructures as a means to reduce the energy requirements of a superlattice phase change memory based on GeTe and Sb$_{2}$Te$_{3}$ heterostructures.…

A semiconductor superlattice with hot electron injection into the miniband is considered. The injection changes the stationary distribution function and results in a qualitative change of the frequency behaviour of the differential…

We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…

We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the…

Using recent mathematical advances, a geometric approach to rare noise-driven transition events in nonequilibrium systems is given, and an algorithm for computing the maximum likelihood transition curve is generalized to the case of…

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…

A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…

Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demonstrated in NC-FETs with various device structures and…

Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small…

In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect…

We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features a semi-suspended channel above a…

We present a throughout study of transmission and localization properties of Fibonacci superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. We use the transfer matrix formalism…

We consider a new type of cooling mechanism for a suspended nanowire acting as a weak link between two superconductive electrodes. By applying a bias voltage over the system, we show that the system can be viewed as a refrigerator for the…

A charge carrier confined in a quasi-one-dimensional semiconductor helical nanostructure in the presence of an electric field normal to the axis of the helix is subjected to a periodic potential proportional to the strength of the field and…

A nanoscale variable resistor consisting of a metal nanowire (active element), a dielectric, and a gate, is proposed. By means of the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced,…

The effect of electrical resistivity switching in nanographite films is described. In difference with cases published elsewhere the switching in nanographite films occurs from stable high conductive to metastable low conductive state.…

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often…

Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper,…