相关论文: Using Dynamic Allocation of Write Voltage to Exten…

Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different levels corresponding to the number of electrons it contains. Increasing the cell level is easy; however, reducing a cell…

Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…

Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…

Flash memory has been widely adopted as stand-alone memory and embedded memory due to its robust reliability. However, the limited endurance obstacles its further applications in storage class memory (SCM) and to proceed endurance-required…

Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined…

Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state…

This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the real-time tracking of the optimal read voltage across…

In this work, we study the performance of different decoding schemes for multilevel flash memories where each page in every block is encoded independently. We focus on the multi-level cell (MLC) flash memory, which is modeled as a two-user…

Power systems with high penetration of variable renewable generation are vulnerable to periods with low generation. An alternative to retain high dispatchable generation capacity is electric energy storage that enables utilization of…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…

In this paper, we consider modulation codes for practical multilevel flash memory storage systems with cell levels. Instead of maximizing the lifetime of the device [Ajiang-isit07-01, Ajiang-isit07-02, Yaakobi_verdy_siegel_wolf_allerton08,…

Flash memory is a non-volatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing…

Refresh is an important operation to prevent loss of data in dynamic random-access memory (DRAM). However, frequent refresh operations incur considerable power consumption and degrade system performance. Refresh power cost is especially…

A rewriting code construction for flash memories based upon lattices is described. The values stored in flash cells correspond to lattice points. This construction encodes information to lattice points in such a way that data can be written…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

Deeply embedded systems often have the tightest constraints on energy consumption, requiring that they consume tiny amounts of current and run on batteries for years. However, they typically execute code directly from flash, instead of the…

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…

Accurate battery lifetime prediction is important for preventative maintenance, warranties, and improved cell design and manufacturing. However, manufacturing variability and usage-dependent degradation make life prediction challenging.…