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We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half-filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed…

强关联电子 · 物理学 2015-05-13 Maria Elisabetta Pezzoli , Federico Becca

We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…

强关联电子 · 物理学 2021-06-24 Nathan Giovanni , Marcello Civelli , Maria C. O. Aguiar

The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…

强关联电子 · 物理学 2007-05-23 F. Mancini

The interplay of interactions and disorder is studied using the Anderson-Hubbard model within the typical medium dynamical cluster approximation. Treating the interacting, non-local cluster self-energy ($\Sigma_c[{\cal \tilde{G}}](i,j\neq…

无序系统与神经网络 · 物理学 2015-12-02 C. E. Ekuma , S. -X. Yang , H. Terletska , K. -M. Tam , N. S. Vidhyadhiraja , J. Moreno , M. Jarrell

We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling,…

凝聚态物理 · 物理学 2007-05-23 Jaichul Yi Lizeng Zhang , Geoff S Canright

We use the density matrix renormalization group to study the quantum transitions that occur in the half-filled one-dimensional fermionic Hubbard model with onsite potential disorder. We find a transition from the gapped Mott phase with…

强关联电子 · 物理学 2016-08-15 Ramesh V. Pai , Alexander Punnoose , Rudolf A. Römer

We present studies of the atomic limit of the extended Hubbard model with pair hopping for arbitrary electron density and arbitrary chemical potential. The Hamiltonian consists of (i) the effective on-site interaction $U$ and (ii) the…

强关联电子 · 物理学 2014-11-04 Konrad Kapcia

We study the interplay of Anderson localization and interaction in a two chain Hubbard ladder allowing for arbitrary ratio of disorder strength to interchain coupling. We obtain three different types of spin gapped localized phases…

强关联电子 · 物理学 2009-11-07 E. Orignac , Y. Suzumura

We examine the localization properties of the three-dimensional (3D) Anderson Hamiltonian with off-diagonal disorder using the transfer-matrix method (TMM) and finite-size scaling (FSS). The nearest-neighbor hopping elements are chosen…

无序系统与神经网络 · 物理学 2007-05-23 P. Cain , R. A. Roemer , M. Schreiber

The combined effects of strong disorder, strong correlations and hopping in the Anderson-Hubbard model have been shown to produce a zero bias anomaly which has an energy scale proportional to the hopping and minimal dependence on…

强关联电子 · 物理学 2015-05-18 R. Wortis , W. A. Atkinson

A one-dimensional model of interacting electrons with on-site $U$, nearest-neighbor $V$, and correlated-hopping interaction $T^{\ast}$ is studied at half-filling using the continuum-limit field theory approach. The ground state phase…

强关联电子 · 物理学 2009-10-31 G. I. Japaridze , A. P. Kampf

A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…

强关联电子 · 物理学 2021-10-04 G. A. Canella , V. V. França

We consider the change in electron localization due to the presence of electron-electron repulsion in the \HA model. Taking into account local Mott-Hubbard physics and static screening of the disorder potential, the system is mapped onto an…

无序系统与神经网络 · 物理学 2008-12-28 Peter Henseler , Johann Kroha , Boris Shapiro

Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…

强关联电子 · 物理学 2007-12-11 M. Aichhorn , E. Arrigoni , M. Potthoff , W. Hanke

We study the Anderson disordered Hubbard model on the honeycomb lattice. The Hubbard term is han- dled with strong-coupling perturbation theory which encodes the Mott transition physics into a rich dynamical structure of a local…

强关联电子 · 物理学 2018-12-06 Alireza Habibi , Elaheh Adibi , S. A. Jafari

We present a detailed, quantitative study of the competition between interaction- and disorder-induced effects in electronic systems. For this the Anderson-Hubbard model with diagonal disorder is investigated analytically and by Quantum…

凝聚态物理 · 物理学 2007-05-23 M. Ulmke , V. Janis , D. Vollhardt

A one-dimensional model of interacting electrons with on-site $U$, nearest-neighbor $V$, and pair-hopping interaction $W$ is studied at half-filling using the continuum limit field theory approach. The ground state phase diagram is obtained…

凝聚态物理 · 物理学 2016-08-31 G. I. Japaridze , Sujit Sarkar

We obtain the quantum phase diagram of the ionic Hubbard model including electron-hole symmetric density-dependent hopping. The boundaries of the phases are determined by crossing of excited levels with particular discrete symmetries, which…

强关联电子 · 物理学 2023-04-11 P. Roura Bas , A. A. Aligia

We study numerically the interplay of disorder and attractive interactions for spin-1/2 fermions in the three-dimensional Hubbard model. The results obtained by projector quantum Monte Carlo simulations show that at moderate disorder,…

凝聚态物理 · 物理学 2007-05-23 Bhargavi Srinivasan , Giuliano Benenti , Dima L. Shepelyansky

By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…

强关联电子 · 物理学 2009-11-10 S. Nakatsuji , V. Dobrosavljevic , D. Tanaskovic , M. Minakata , H. Fukazawa , Y. Maeno
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