相关论文: Self-compensation due to point defects in Mg-doped…

The formation and migration energies for various point defects, including vacancies and self-interstitials in aluminum are reinvestigated systematically using the supercell approximation in the framework of orbital-free density functional…

Although InP and GaAs have very similar band-structure their magnetic properties appear to drastically differ. Critical temperatures in (In,Mn)P are much smaller than that of (Ga,Mn)As and scale linearly with Mn concentration. This is in…

Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of…

We study some aspects of a class of non-AdS holography where the 3d bulk gravity is given by Generalized Minimal Massive Gravity (GMMG). We consider the spacelike warped $AdS_3$ ($WAdS_3$) black hole solution of this model where the 2d dual…

Simulations of defects in paramagnetic materials at high temperature constitute a formidable challenge to solid state theory due to the interaction of magnetic disorder, vibrations, and structural relaxations. CrN is a material where these…

We construct the boundary conformal field theory that describes the low-temperature behavior of the two-channel Anderson impurity model. The presence of an exactly marginal operator is shown to generate a line of stable fixed points…

The results of experimental investigations of ESR spectra of manganese impurity ions in a GaAs : Mn system are presented. The studies are done for various a Fermi level position relative to valence band edge in the system. Characteristic…

MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only…

Motivated by the recently observed sublattice asymmetry of substitutional nitrogen impurities in CVD grown graphene, we show, in a mathematically transparent manner, that oscillations in the local density of states driven by the presence of…

We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with…

We investigate acceptor and donor states in GaN nanocrystals doped with a single substitutional impurity. Quantum dots (QD's) of zinc-blende structure and spherical shape are considered with the radius ranging from 4.5 to 67.7 A. The…

We find Marginal Fermi Liquid (MFL) like behavior in the Hubbard model on a square lattice for a range of hole doping and on-site interaction parameter U. Thereby we use a self-consistent projection operator method. It enables us to compute…

We have studied the structure of $^4$He droplets doped with magnesium atoms using density functional theory. We have found that the solvation properties of this system strongly depend on the size of the $^4$He droplet. For small drops, Mg…

Present work investigates the structural, electronic and magnetic properties of wurtzite (0001) GaN nanowires (NWs) doped with Gd and point defects by employing the GGA+U approximation. We find that Ga vacancies (VGa) exhibit lower…

Mean-field theories have since long predicted edge magnetism in graphene nanoribbons, where the order parameter is given by the local magnetization. However, signatures of edge magnetism appears elusive in the experiments, suggesting…

Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-doping by holes from the cladding layers can…

The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the…

The Heyd-Scuseria-Ernzerhof (HSE) hybrid functional has become a widely used tool for theoretical calculations of point defects in semiconductors. It generally offers a satisfactory qualitative description of defect properties, including…

We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy (MBE). A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a…

The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved…