相关论文: Oxygen modulated quantum conductance for ultra-thi…
We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal…
Recent experiments in the integer quantum Hall regime seem to find direct transitions from a quantum Hall state with Hall conductance $\sigma_{xy} = n e^2/h $ with integer $n > 1$, to an insulating state in weak magnetic fields. We study…
Anion exchange membranes are used in alkaline fuel cells and offer a promising alternative to the more expensive proton exchange membrane fuel cells. However, hydroxide ion conductivity in anion exchange membranes is low, and the quest for…
We studied the spin-dependent quantum transport properties using a simple modelling of a Datta-Das spin transistor. We refine previous results by accounting the propagation medium changes of opacity felt by itinerant electrons, when the…
We study the model of a molecular switch comprised of a molecule with a soft vibrational degree of freedom coupled to metallic leads. In the presence of strong electron-ion interaction, different charge states of the molecule correspond to…
We present a theoretical study of the electronic transport through a many-level quantum dot driven by time-dependent signals applied at the contacts to the leads. If the barriers oscillate out of phase the system operates like a turnstile…
Spin-dependent charge transport in magnetic tunnel junctions (MTJs) can be manipulated by a temperature gradient, which can be utilized for spintronic and spin caloritronic applications. Evaluation of the thermally induced phenomena…
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics…
This work demonstrates that porous helical WOx architectures enable a distinct low-power regime for planar ITO/WOx/ITO resistive random-access devices. While thin film and helical devices behave similarly at a 5 mA compliance, only helical…
Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…
The rapid development of artificial intelligence (AI), Internet of Things (IoT), and edge computing applications has posed severe challenges to conventional memory technologies in terms of density, speed, and energy consumption. Herein, a…
A system of degenerate drift-diffusion equations for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a three-dimensional bounded domain with mixed…
Organic mixed conductors (OMCs) represent a promising class of materials for applications in bioelectronics, physical computing, and thermoelectrics. Rather unparalleled, OMCs feature dynamics spanning multiple length and time scales,…
Understanding and controlling phase transitions is a fundamental part of physics and has been central to many technological revolutions, from steam engines to field-effect transistors. At present, there is strong interest in materials with…
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance…
Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and…
Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…