相关论文: Zero-line modes at stacking faulted domain walls i…
We investigate the electronic confinement in bilayer graphene by topological loops of different shapes. These loops are created by lateral gates acting via gap inversion on the two graphene sheets. For large-area loops the spectrum is well…
Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their…
Spatially inhomogeneous strains in graphene can simulate the effects of valley-dependent magnetic fields. As demonstrated in recent experiments, the realizable magnetic fields are large enough to give rise to well-defined flat pseudo-Landau…
We show that the low-energy electronic structure of arbitrarily stacked graphene multilayers with nearest-neighbor interlayer tunneling consists of chiral pseudospin doublets. Although the number of doublets in an $N$-layer system depends…
The so called quantum spin Hall phase is a topologically non trivial insulating phase that is predicted to appear in graphene and graphene-like systems. In this work we address the question of whether this topological property persists in…
A twisted honeycomb bilayer exhibits a moir\'e superstructure that is composed of a hexagonal arrangement of AB and BA stacked domains separated by domain boundaries. In the case of twisted bilayer graphene, the application of an electric…
Coupling photonic cavity fields to electronic degrees of freedom in 2D materials introduces an additional control knob to the toolbox of solid-state engineering. Here we demonstrate a subtle competition between cavity frequency and…
Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now,…
In QED of two space dimensions, a quantum Hall effect occurs in the absence of any magnetic field. We give a simple and transparent explanation. In solid state physics, the Hall conductivity for non-degenerate ground state is expected to be…
Trilayer graphene exhibits valley-protected gapless states when the stacking order changes from ABC to CBA and a gate voltage is applied to outer layers. Some of these states survive strong distortions of the trilayer. For example, they…
A promising approach to attain long-distance coherent spin propagation is accessing topological spin-polarized edge states in graphene. Achieving this without external magnetic fields necessitates engineering graphene band structure,…
We analyze the electronic properties of a simple stacking defect in Bernal graphite. We show that a bound state forms, which disperses as $|\bfk-\bfK|^3$ in the vicinity of either of the two inequivalent zone corners $\bfK$. In the presence…
Recent scanning tunneling microscopy experiments on graphene at charge neutrality under strong magnetic fields have uncovered a ground state characterized by Kekul\'e distortion (KD). In contrast, non-local spin and charge transport…
We revealed that 180 degree ferroelectrics domain walls (FDWs) in a ferroelectric substrate, which induce p-n junctions in a graphene channel, lead to the nontrivial temperature and gate voltage dependences of the perpendicular and parallel…
Interacting electrons in flat bands give rise to a variety of quantum phases. One fundamental aspect of such states is the ordering of the various flavours - such as spin or valley - that the electrons can undergo and the excitation…
We propose a minimal model starting from a parent Chern band with quartic dispersion that can describe the spin-valley polarized electrons in rhombohedral tetralayer graphene. The interplay between repulsive and attractive interactions on…
Because of its large density-of-states and the 2{\pi} Berry phase near its low-energy band-contact points, neutral bilayer graphene (BLG) at zero magnetic field (B) is susceptible to chiral-symmetry breaking, leading to a variety of gapped…
We present a numerical study of exciton-polariton (polariton) condensation in a staggered polariton graphene showing a gapped s-band at the $K$ and $K'$ valleys. The condensation occurs at $K$ or $K'$, at the kinetically-favorable negative…
We theoretically study the piezoelectric effects in moir\`e graphene systems. Since the strain couples to the electrons in the system as a pseudo vector potential, which has opposite signs for the $K$ and $K'$ valleys of graphene, its…
A Zener diode is a paradigmatic device in semiconductor-based electronics that consists of a pn junction where an external electric field induces a switching behavior in the current-voltage characteristics. We study Zener tunneling in HgTe…