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Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently,…

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to…

Layered and two-dimensional (2D) materials such as graphene, boron nitride, transition metal dichalcogenides(TMDCs), and black phosphorus (BP) have intriguing fundamental physical properties and bear promise of numerous important…

Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we…

材料科学 · 物理学 2014-07-08 Jingsi Qiao , Xianghua Kong , Zhi-Xin Hu , Feng Yang , Wei Ji

Two-dimensional materials and their heterostructures have emerged as a new class of materials for not only fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to…

介观与纳米尺度物理 · 物理学 2015-11-23 Manabendra Kuiri , Chandan Kumar , Biswanath Chakraborty , Satyendra N Gupta , Mit H. Naik , Manish Jain , A. K. Sood , Anindya Das

As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its…

Anisotropy refers to the property of a material exhibiting directionally dependent features. In this paper, we introduce black phosphorous (BP), the most stable allotrope of phosphorus in layered orthorhombic structure with a bandgap of 0.3…

介观与纳米尺度物理 · 物理学 2014-07-30 Fengnian Xia , Han Wang , Yichen Jia

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer…

We propose a first-principles calculation to investigate the pressure-related transport properties of two kinds of pure monolayer black phosphorus (MBP) devices. Numerical results show that semi-conducting MBP can withstand a considerable…

材料科学 · 物理学 2019-10-31 Ximing Rong , Zewen Wu , Zhizhou Yu , Junjun Li , Xiuwen Zhang , Bin Wang , Yin Wang

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…

介观与纳米尺度物理 · 物理学 2016-12-06 Gen Long , Denis Maryenko , Junying Shen , Shuigang Xu , Jianqiang Hou , Zefei Wu , Wing Ki Wong , Tianyi Han , Jiangxiazi Lin , Yuan Cai , Rolf Lortz , Ning Wang

Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect…

介观与纳米尺度物理 · 物理学 2015-09-04 V. Tayari , N. Hemsworth , I. Fakih , A. Favron , E. Gaufrès , G. Gervais , R. Martel , T. Szkopek

Black phosphorus (BP) has emerged as a promising candidate for next generation electronics and optoelectronics among the 2D family materials due to its extraordinary electrical/optical/optoelectronic properties. Interestingly, BP shows…

Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We…

介观与纳米尺度物理 · 物理学 2014-07-07 M. Venkata Kamalakar , B. N Madhushankar , André Dankert , Saroj P. Dash

The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP)…

应用物理 · 物理学 2019-03-18 Leonardo Viti , Antonio Politano , Miriam Serena Vitiello

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap…

介观与纳米尺度物理 · 物理学 2014-11-17 Han Wang , Xiaomu Wang , Fengnian Xia , Luhao Wang , Hao Jiang , Qiangfei Xia , Matthew L. Chin , Madan Dubey , Shu-jen Han

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation…

Due to its corrugated hexagonal lattice structure, Black phosphorus (BP) has unique anisotropic physical properties, which provides an additional freedom for designing devices. Many body interactions, including interactions with phonon, is…

化学物理 · 物理学 2019-07-23 Shengjie Meng , Hongyan Shi , Hu Jiang , Xiudong Sun , Bo Gao

The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical thickness of 15 nm were encapsulated by hexagonal boron…

介观与纳米尺度物理 · 物理学 2018-11-08 Kohei Hirose , Toshihito Osada , Kazuhito Uchida , Toshihiro Taen , Kenji Watanabe , Takashi Taniguchi , Yuichi Akahama

Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved…

We review the basic optical, electronic, optoelectronic, thermoelectric and mechanical properties of few-layer black phosphorus (BP), a layered semiconductor that can be exfoliated from bulk BP, the most stable allotrope of phosphorus. The…

介观与纳米尺度物理 · 物理学 2017-10-17 Andrey Chaves , W. Ji , J. Maassen , T. Dumitrica , T. Low
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