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Ground state properties of multi-orbital Hubbard models are investigated by the auxiliary field quantum Monte Carlo method. A Monte Carlo technique generalized to the multi-orbital systems is introduced and examined in detail. The algorithm…

强关联电子 · 物理学 2009-10-31 Yukitoshi Motome , Masatoshi Imada

We show that the interplay of strong Hubbard interaction $U$ and spin-orbit coupling $\lambda$ in systems with $d^4$ electronic configuration leads to several unusual magnetic phases. Most notably, we find that competition between…

强关联电子 · 物理学 2015-02-20 O. Nganba Meetei , William S. Cole , Mohit Randeria , Nandini Trivedi

We consider the orbitally degenerate 3-band Hubbard model with on-site interactions which favor low spin and low orbital angular momentum using standard second order perturbation theory in the large Hubbard-U limit. At even integer filling…

强关联电子 · 物理学 2009-11-10 M. Granath , S. Ostlund

It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…

强关联电子 · 物理学 2024-09-16 P. -O. Downey , O. Gingras , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…

We investigate an experimental toy-model system of a pseudospin-half square-lattice Hubbard Hamiltonian in [(SrIrO3)1/(CaTiO3)1] to include both nontrivial complex hopping and moderate electronic correlation. While the former induces…

The microscopic mechanism of the metal-insulator transition is studied by orbital-resolved 51V NMR spectroscopy in a prototype of the quasi-one-dimensional system V6O13. We uncover that the transition involves a site-selective d orbital…

强关联电子 · 物理学 2015-04-24 Yasuhiro Shimizu , Satoshi Aoyama , Takaaki Jinno , Masayuki Itoh , Yutaka Ueda

The search for materials with novel and unusual electronic properties is at the heart of condensed matter physics as well as the basis to develop conceptual new technologies. In this context, the correlated honeycomb transition metal oxides…

强关联电子 · 物理学 2021-04-21 Thomas Dziuba , Ina-Marie Pietsch , Georg A. Traeger , Philipp Gegenwart , Martin Wenderoth

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

We examine the orbital-selective Mott transition in the non-hybridized two-band Hubbard model using the dynamical mean-field theory. We find that the orbital-selective Mott transition could be quantitatively depicted by the {local two-qubit…

强关联电子 · 物理学 2024-07-19 Yuekun Niu , Yu Ni , Haishan Zhang , Liang Qiu , Jianli Wang , Leiming Chen , Yun Song , Shiping Feng

The combination of strong spin-orbit coupling and Coulomb interactions makes the $5d$ iridates a unique platform for realizing novel correlated electronic states. Here, utilizing infrared spectroscopy, we demonstrate that a robust Mott…

强关联电子 · 物理学 2026-03-06 Kai Wang , Jun Yang , Chaoyang Kang , Weikang Wu , Wenka Zhu , Jianzhou Zhao , Yaomin Dai , Bing Xu

The anisotropic degenerate two-orbital Hubbard model is studied within dynamical mean-field theory at low temperatures. High-precision calculations on the basis of a refined quantum Monte Carlo (QMC) method reveal that two distinct…

强关联电子 · 物理学 2007-05-23 C. Knecht , N. Blümer , P. G. J. van Dongen

The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed matter physics for more than half a century. The persistence of this…

The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…

强关联电子 · 物理学 2009-11-10 Thomas Pruschke , Ralf Bulla

We propose a simple theoretical description of the metal-insulator transition of rare-earth nickelates. The theory involves only two orbitals per nickel site, corresponding to the low-energy anti-bonding $e_g$ states. In the monoclinic…

强关联电子 · 物理学 2015-03-26 Alaska Subedi , Oleg E. Peil , Antoine Georges

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

The low-frequency dynamical response of an Anderson insulator is dominated by so-called Mott resonances: hybridization of pairs of states close in energy, but separated spatially. We study the effect of interaction on Mott resonances in the…

介观与纳米尺度物理 · 物理学 2017-02-02 D. A. Ivanov , M. V. Feigel'man

A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy…

强关联电子 · 物理学 2023-09-13 Masanori Kohno

This article contains a theoretical overview of the physical properties of antiferromagnetic Mott insulators in spatial dimensions greater than one. Many such materials have been experimentally studied in the past decade and a half, and we…

强关联电子 · 物理学 2009-11-10 Subir Sachdev