中文
相关论文

相关论文: Mott transition and anomalous resistive state in t…

200 篇论文

An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018%…

强关联电子 · 物理学 2009-11-10 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Novel phases of two dimensional electron systems resulting from new surface or interface modified electronic structures have generated significant interest in material science. We utilize photoemission spectroscopy to show that the…

We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…

强关联电子 · 物理学 2013-04-30 Ru Chen , SungBin Lee , Leon Balents

A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…

Mott insulator plays a central role in strongly correlated physics, where the repulsive Coulomb interaction dominates over the electron kinetic energy and leads to insulating states with one electron occupying each unit cell. Doped Mott…

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster Dynamical Mean Field Theory (DMFT). We compare cluster DMFT results with those of single site DMFT. We show that inclusion of the short range…

强关联电子 · 物理学 2009-11-13 H. Park , K. Haule , G. Kotliar

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

The effect of on-site electron-electron repulsion $U$ in a band insulator is explored for a bilayer Hubbard Hamiltonian with opposite sign hopping in the two sheets. The ground state phase diagram is determined at half-filling in the plane…

强关联电子 · 物理学 2013-04-09 Axel Euverte , Simone Chiesa , Richard . T. Scalettar , George G. Batrouni

Recently, a quantum anomalous Hall state at odd integer filling in moir\'e stacked MoTe$_2$/WSe$_2$ was convincingly interpreted as a topological Mott insulator state appearing due to strong interactions in {\it band} basis [P. Mai, J.…

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

Many experiments investigating magnetic field tuned superconductor-insulator transition (H-SIT), often exhibit low-temperature resistance saturation, which is interpreted as an anomalous metallic phase emerging from a "failed…

超导电性 · 物理学 2021-03-24 Xinyang Zhang , Bar Hen , Alexander Palevski , Aharon Kapitulnik

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2…

强关联电子 · 物理学 2017-12-06 Shuang Qiao , Xintong Li , Naizhou Wang , Wei Ruan , Cun Ye , Peng Cai , Zhenqi Hao , Hong Yao , Xianhui Chen , Jian Wu , Yayu Wang , Zheng Liu

An intriguing idea of spin-orbit Mott insulator has been proposed to explain magnetic insulating behavior in various iridates. This scenario relies on the strength of the spin-orbit coupling being comparable to electronic correlations, and…

强关联电子 · 物理学 2013-05-30 Jean-Michel Carter , Hae-Young Kee

Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing…

强关联电子 · 物理学 2014-12-05 Abhijit Biswas , Ki-Seok Kim , Yoon Hee Jeong

The double-exchange model, which has been extensively studied in the context of colossal magneto-resistance in perovskite manganese oxides, is known to exhibit a ferromagnetic metallic state at low temperatures because of the interplay…

强关联电子 · 物理学 2010-02-22 Yukitoshi Motome , Nobuo Furukawa

We study the interplay between Mott physics, driven by Coulomb repulsion U, and Hund physics, driven by Hund's coupling J, for a minimal model for Hund metals, the orbital-symmetric three-band Hubbard-Hund model (3HHM) for a lattice filling…

强关联电子 · 物理学 2021-09-09 K. M. Stadler , G. Kotliar , S. -S. B. Lee , A. Weichselbaum , J. von Delft

A weird electronic state accompanied with an anomalous superconducting precursor and/or exotic orders, called the pseudogap state, arises prior to a superconducting condensate in underdoped cuprates that are situated near Mott transition.…

强关联电子 · 物理学 2022-09-07 Tetsuya Furukawa , Kazuya Miyagawa , Mitsunori Matsumoto , Takahiko Sasaki , Kazushi Kanoda

Using the density matrix renormalization group method, we studied the ground state of the one-dimensional $S=1$ Bose-Hubbard model with local three-body interactions, which can be a superfluid or a Mott insulator state. We drew the phase…

量子气体 · 物理学 2019-03-19 A. F. Hincapie-F , R. Franco , J. Silva-Valencia

We address how the nature of linearly dispersing edge states of two dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard like on-site repulsion $U$ in finite ribbons of two…

强关联电子 · 物理学 2012-06-26 Amal Medhi , Vijay B. Shenoy , H. R. Krishnamurthy
‹ 上一页 1 8 9 10 下一页 ›