相关论文: Surface effect that causes a peak in band-edge pho…

We present an experimental investigation of band-gap shrinkage in n-type GaN using photoluminescence spectroscopy, as a function of electron concentration and temperature. The observed systematic shift of the band-to-band transition energy…

A detailed investigation by one-step photoemission calculations of the GaN(0001)-(1x1) surface in comparison with recent experiments is presented in order to clarify its structural properties and electronic structure. The discussion of…

The core-level and valence band electronic structure of the well-defined near-surface layer of n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy before and after modification of the layer by an…

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent.…

We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity…

Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of externally applied uniform electric field, the same effect may be…

We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant…

We address the mechanism of early stages of growth and shape transition of the unique nanowall network (NwN) nanostructure of GaN by experimentally monitoring its controlled growth using PA-MBE and complementing it by…

We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier…

High quantum yield, low transverse energy spread and prompt response time make GaAs activated to negative electron affnity, an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the…

We study the stationary surface photocurrent in 2D electron gas near the helium surface. Electron gas is assumed to be attracted to the helium surface due to the image attracting force and an external stationary electric field. The…

We have measured the photonic bandstructure of GaAs photonic-crystal waveguides with high energy and momentum resolution using near-field scanning optical microscopy. Intriguingly, we observe additional bands that are not predicted by…

We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength of 325 nm. It was found that while the G peak of graphene remains pronounced in UV Raman spectra, the 2D band…

In recent years there has been significant debate on whether the edge type of graphene nanoflakes (GNF) or graphene quantum dots (GQD) are relevant for their electronic structure, thermal stability and optical properties. Using computer…

Q. Ma et al.[1] recently reported a strong photocurrent associated with charge neutrality in graphene devices with non-uniform geometries, which they interpreted as an intrinsic photoresponse enhanced by the momentum non-relaxing nature of…

Photocurrents in nanotube p-n junctions are calculated using a non-equilibrium Green function quantum transport formalism. The short-circuit photocurrent displays band-to-band transitions and photon-assisted tunneling, and has multiple…

The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…

The photogalvanic effect is studied in electron gas over the liquid He surface with the presence of quantizing magnetic field. The gas is affected by the weak alternating microwave electric field tilted towards the surface normal. Both…

Recently developed model allows for simulations of electric field influence on the surface states. The results of slab simulations show considerable change of the energy of quantum states in the electric field, i.e. Stark Effect associated…

It is shown that the peak structure observed in angle-resolved photoelectron spectra of metallic deposits can only be unambiguously associated to single electronic states if the deposit has a two dimensional character (finite along one…