相关论文: Spin injection into multilayer graphene from highl…

We demonstrate the electrical injection and detection of spin-polarized electrons in the Co2FeSi/GaAs hybrid system using lateral transport structures. Spin valve signatures and characteristic Hanle curves are observed both in the nonlocal…

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…

We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical…

We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin…

We report a real-time first-principles study of ultrafast spin injection in a WSe$_2$-graphene heterobilayer under circularly polarized laser irradiation, using time-dependent density functional theory. Contrary to conventional…

We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, Co$_{2}$FeSi (CFS) or Fe$_{3}$Si (FS). The magnitude of the nonlocal spin-valve (NLSV) signals is…

All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit…

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…

Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the…

Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\Delta}RNL) of 130 {\Omega} is observed at room temperature, which is the largest value observed in…

Graphene is a promising platform for spin-based non-volatile memory, logic, and neuromorphic computing by combining long-distance spin transport with electrical tunability at room temperature. However, advancing beyond passive spin channels…

We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\Delta}RNL) of 130 {\Omega} is observed at room temperature, which is the largest value observed in…

We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was…

We report the current-perpendicular-to-plane giant magnetoresistance of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001)…

We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped…

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity…

The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the…

We study the nonlocal spin transport in a lateral spin valve with multiple ferromagnetic (FM) electrodes. When two current-injecting and two spin current-detecting electrodes are all ferromagnetic, the number of possible nonlocal spin…