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相关论文: Surface-state spin textures in strained bulk HgTe:…

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The nontrivial topology of spin systems such as skyrmions in real space can promote complex electronic states. Here, we provide a general viewpoint at the emergence of topological electronic states in spin systems based on the methods of…

材料科学 · 物理学 2023-10-16 Fabian R. Lux , Sumit Ghosh , Pascal Prass , Emil Prodan , Yuriy Mokrousov

Superconductors with nontrivial band structure topology represent a class of materials with unconventional and potentially useful properties. Recent years have seen much success in creating artificial hybrid structures exhibiting main…

The surface and bulk states in topological materials have shown promise in many applications. Grey or $\alpha$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both…

The topological surface states of strained HgTe have been measured using high-resolution ARPES measurements. The dispersion of surface states form a Dirac cone, which origin is close to the top of the \ghh band: the top half of the Dirac…

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the…

介观与纳米尺度物理 · 物理学 2010-01-12 D. Hsieh , L. A. Wray , D. Qian , Y. Xia , Y. S. Hor , R. J. Cava , M. Z. Hasan

Here we report the evolution of bulk band structure and surface states in rare earth mono-bismuthides with partially filled f shell. Utilizing synchrotron-based photoemission spectroscopy, we determined the three-dimensional bulk band…

介观与纳米尺度物理 · 物理学 2019-02-12 Peng Li , Zhongzheng Wu , Fan Wu , Chao Cao , Chunyu Guo , Yi Wu , Yi Liu , Zhe Sun , Cheng-Maw Cheng , Deng-Sung Lin , Frank Steglich , Huiqiu Yuan , Tai-Chang Chiang , Yang Liu

Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a…

介观与纳米尺度物理 · 物理学 2024-08-05 Yong-Cheng Jiang , Toshikaze Kariyado , Xiao Hu

Using angle-resolved photoemission spectroscopy, we report electronic structure for representative members of ternary topological insulators. We show that several members of this family, such as Bi2Se2Te, Bi2Te2Se, and GeBi2Te4, exhibit a…

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these…

强关联电子 · 物理学 2013-07-04 Z. -H. Pan , E. Vescovo , A. V. Fedorov , G. D. Gu , T. Valla

Although topological surface states are known to be robust against non-magnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to the surface defects. Take Bi2Se3 as an example, we demonstrated…

材料科学 · 物理学 2013-03-05 Binghai Yan , Delin Zhang , Claudia Felser

Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…

介观与纳米尺度物理 · 物理学 2023-09-11 Nezhat Pournaghavi , Banasree Sadhukhan , Anna Delin

Topological crystalline insulators are new states of matter in which the topological nature of electronic structures arises from crystal symmetries. Here we predict the first material realization of topological crystalline insulator in the…

材料科学 · 物理学 2012-08-01 Timothy H. Hsieh , Hsin Lin , Junwei Liu , Wenhui Duan , Arun Bansil , Liang Fu

Topological Kondo insulators are a new class of topological insulators in which metallic surface states protected by topological invariants reside in the bulk band gap at low temperatures. Unlike other three-dimensional topological…

强关联电子 · 物理学 2016-07-12 N. Xu , H. Ding , M. Shi

We consider the stability of fragile topological bands protected by space-time inversion symmetry in the presence of strong electron-electron interactions. At the single-particle level, the topological nature of the bands prevents the…

强关联电子 · 物理学 2022-02-21 Ari M. Turner , Erez Berg , Ady Stern

We show that the surface states in topological insulators can be understood based on a well-known Shockley model, a one-dimensional tight-binding model with two atoms per elementary cell, connected via alternating tunneling amplitudes. We…

强关联电子 · 物理学 2012-08-30 Sergey S. Pershoguba , Victor M. Yakovenko

We revisit the problem of surface states in semiconductors with inverted band structures, such as $\alpha$-Sn and HgTe. We unravel the confusion that arose over the past decade regarding the origin of the surface states, their topological…

介观与纳米尺度物理 · 物理学 2022-01-19 Alexander Khaetskii , Vitaly Golovach , Arnold Kiefer

Three-dimensional topological crystalline insulators were recently predicted and observed in the SnTe class of IV-VI semiconductors, which host metallic surface states protected by crystal symmetries. In this work, we study thin films of…

介观与纳米尺度物理 · 物理学 2014-01-31 Junwei Liu , Timothy H. Hsieh , Peng Wei , Wenhui Duan , Jagadeesh Moodera , Liang Fu

We consider the transport properties of topological insulators surface states in the presence of uncorrelated point-like disorder, both in the classical and quantum regimes. The transport properties of those two-dimensional surface states…

介观与纳米尺度物理 · 物理学 2012-05-24 Pierre Adroguer , David Carpentier , Jérôme Cayssol , Edmond Orignac

In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a…

Topological phases with insulating bulk and gapless surface or edge modes have attracted much attention because of their fundamental physics implications and potential applications in dissipationless electronics and spintronics. In this…

材料科学 · 物理学 2016-05-18 Yafei Ren , Zhenhua Qiao , Qian Niu
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