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相关论文: Three-dimensional resistivity switching between co…

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Layered transition metal dichalcogenides (TMDs) are commonly classified as quasi-two-dimensional materials, meaning that their electronic structure closely resembles that of an individual layer, which results in resistivity anisotropies…

New theoretical proposals and experimental findings on transition metal dichalcogenide 1T-TaS$_2$ have revived interests in its possible Mott insulating state. We perform a comprehensive scanning tunneling microscopy and spectroscopy…

强关联电子 · 物理学 2022-01-11 Zongxiu Wu , Kunliang Bu , Wenhao Zhang , Ying Fei , Yuan Zheng , Jingjing Gao , Xuan Luo , Zheng Liu , Yu-ping Sun , Yi Yin

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2…

强关联电子 · 物理学 2017-12-06 Shuang Qiao , Xintong Li , Naizhou Wang , Wei Ruan , Cun Ye , Peng Cai , Zhenqi Hao , Hong Yao , Xianhui Chen , Jian Wu , Yayu Wang , Zheng Liu

If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…

强关联电子 · 物理学 2020-06-24 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…

Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal…

强关联电子 · 物理学 2020-05-29 Kunliang Bu , Wenhao Zhang , Ying Fei , Zongxiu Wu , Yuan Zheng , Jingjing Gao , Xuan Luo , Yu-Ping Sun , Yi Yin

In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…

Quasi-two dimensional transition metal dichalcogenides (TMD) exhibit dramatic properties that may transform electronic and photonic devices. We report on how the anomalously large magnetoresistance (MR) observed under high magnetic field in…

材料科学 · 物理学 2017-12-21 Junjie Yang , Jonathan Colen , Jun Liu , Manh Cuong Nguyen , Gia-Wei Chern , Despina Louca

The transition metal dichalcogenides 1T-TaS$_2$ and 1T-TaSe$_2$ have been extensively studied for the complicated correlated electronic properties. The origin of different surface electronic states remains controversial. We apply scanning…

强关联电子 · 物理学 2022-01-11 Wenhao Zhang , Zongxiu Wu , Kunliang Bu , Ying Fei , Yuan Zheng , Jingjing Gao , Xuan Luo , Zheng Liu , Yu-ping Sun , Yi Yin

Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition,…

Transition-metal dichalcogenides (TMDs) are layered compounds that support many electronic phases, including various charge density waves, superconducting, and Mott insulating states. Their intercalation with magnetic ions introduces…

Layered transition-metal dichalcogenides (TMDs) host competing electronic states that can be tuned by external perturbations, providing a platform to explore the interplay between disorder, electronic structure, and quantum transport. Here…

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

Transitions between different charge density wave (CDW) states in quasi-two-dimensional materials may be accompanied also by changes in the inter-layer stacking of the CDW. Using MeV ultrafast electron diffraction, the out-of-plane stacking…

材料科学 · 物理学 2017-11-09 L. Le Guyader , T. Chase , A. Reid , R. K. Li , D. Svetin , X. Shen , T. Vecchione , X. J. Wang , D. Mihailovic , H. A. Dürr

Strong electron correlation drives 1T-TaS2 from a half-filled metallic state into a Mott insulating phase, coexisting with a charge density wave at low temperatures. Under external stimuli such as pressure or ionic gating, superconductivity…

强关联电子 · 物理学 2026-03-04 Haiyang Chen , Zhiqiang Sun , Peng Chen

Quantum states of strongly correlated electrons are of prime importance to understand exotic properties of condensed matter systems and the controllability over those states promises unique electronic devices such as a Mott memory. As a…

Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are…

1T-TaS$_2$ undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott…

强关联电子 · 物理学 2020-08-26 Y. D. Wang , W. L. Yao , Z. M. Xin , T. T. Han , Z. G. Wang , L. Chen , C. Cai , Yuan Li , Y. Zhang

When electron-electron interaction dominates over other electronic energy scales, exotic, collective phenomena often emerge out of seemingly ordinary matter. The strongly correlated phenomena, such as quantum spin liquid and unconventional…

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good…

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