相关论文: Time-resolved spin-torque switching in MgO-based p…
We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability…
Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no…
Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel…
Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so…
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…
Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy. However, the requirement of an external magnetic…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is…
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the…
Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of…
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in…
The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To…
Parallel (P) and antiparallel (AP) configurations are widely applied in magnetic heterostructures and have significant impacts on the spin-wave transmission in magnonic devices. In the present study, a theoretical investigation was…
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel…
We study the spin dynamics in Fe|MgO|Fe tunnel junction with the dynamical exchange coupling by coupled Landau-Lifshitz-Gilbert equations. The effects of spin pumping on the spin dynamics are investigated in detail. It is observed that the…
Motivated by recent experiments, where the tunnel magnetoresitance (TMR) of a spin valve was measured locally, we theoretically study the distribution of TMR along the surface of magnetized electrodes. We show that, even in the absence of…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…