Spin-transfer torque switching at ultra low current densities

Johannes Christian Leutenantsmeyer; Vladyslav Zbarsky; Steffen Wittrock; Marvin Walter; Patrick Peretzki; Henning Schuhmann; Andy Thomas; Karsten Rott; Guenter Reiss; Tae Hee Kim; Michael Seibt; Markus Muenzenberg

doi:10.2320/matertrans.MA201570

Spin-transfer torque switching at ultra low current densities

Materials Science 2016-01-06 v2

Authors: Johannes Christian Leutenantsmeyer , Vladyslav Zbarsky , Steffen Wittrock , Marvin Walter , Patrick Peretzki , Henning Schuhmann , Andy Thomas , Karsten Rott , Guenter Reiss , Tae Hee Kim , Michael Seibt , Markus Muenzenberg

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Abstract

The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of Boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.2 kA/cm $^2$ is observed. As of today, this value is the lowest reported value for current-induced magnetization reversal.

Keywords

magnetic tunnel junctions spin current spintronics

Cite

@article{arxiv.1405.4172,
  title  = {Spin-transfer torque switching at ultra low current densities},
  author = {Johannes Christian Leutenantsmeyer and Vladyslav Zbarsky and Steffen Wittrock and Marvin Walter and Patrick Peretzki and Henning Schuhmann and Andy Thomas and Karsten Rott and Guenter Reiss and Tae Hee Kim and Michael Seibt and Markus Muenzenberg},
  journal= {arXiv preprint arXiv:1405.4172},
  year   = {2016}
}

Spin-transfer torque switching at ultra low current densities

Abstract

Keywords

Cite

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