相关论文: Simulations of a silicon pixel based on MOS Deep T…
Unlike hiding bit-level messages, hiding image-level messages is more challenging, which requires large capacity, high imperceptibility, and high security. Although recent advances in hiding image-level messages have been remarkable,…
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and…
Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…
Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multi-qubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in…
Tightly focused optical dipole traps induce vector light shifts ("fictitious magnetic fields") which complicate their use for single-atom trapping and manipulation. The problem can be mitigated by adding a larger, real magnetic field, but…
Devices authentication is one crucial aspect of any communication system. Recently, the physical layer approach radio frequency (RF) fingerprinting has gained increased interest as it provides an extra layer of security without requiring…
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron…
We present a study of the performance of the trapped-ion driven geometric phase gates introduced in [New J. Phys. 15, 083001 (2013)] when realized in a stimulated Raman transition. We show that the gate can achieve errors below the…
Rydberg atom arrays are a leading platform for quantum computing and simulation, combining strong interactions with highly coherent operations and flexible geometries. However, the achievable fidelities are limited by the finite lifetime of…
We theoretically investigate the use of fast pulsed two-qubit gates for trapped ion quantum computing in a two-dimensional microtrap architecture. In one dimension, such fast gates are optimal when employed between nearest neighbours, and…
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases.…
The ground state properties of a one-dimensional system with particle-hole symmetry, consisting of a gate controlled dot coupled to an interacting reservoir, are explored using the numerical DMRG method. It was previously shown that the…
The Silicon Electron Multiplier (SiEM) is a novel sensor concept for minimum ionizing particle (MIP) detection which uses internal gain and fine pitch to achieve excellent temporal and spatial resolution. In contrast to sensors where the…