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相关论文: Pressure enhanced thermoelectric properties in Mg2…

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The anisotropic thermoelectric transport properties of bulk silicon strained in [111]-direction were studied by detailed first-principles calculations focussing on a possible enhancement of the power factor. Electron as well as hole doping…

材料科学 · 物理学 2012-06-28 N. F. Hinsche , I. Mertig , P. Zahn

The electron-doping-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the…

强关联电子 · 物理学 2018-08-15 Michael W. Swift , Zach Porter , Stephen D. Wilson , Chris G. Van de Walle

As-Based Zintl compounds Ba1-xKxCd2As2 crystallized in the CaAl2Si2-type structure (space group P3-m1) were prepared using solid-state reactions followed by hot-pressing. We have successfully substituted K for Ba up to x = 0.08, producing…

材料科学 · 物理学 2018-11-28 H. Kunioka , K. Kihou , H. Nishiate , a A. Yamamoto , H. Usui , K. Kuroki , C. H. Lee

The hydrostatic pressure induced changes in the transport properties of monolayer (ML) MoS$_2$ have been investigated using first-principles density functional theory based calculations. The application of pressure induces shift in the…

材料科学 · 物理学 2023-08-02 Saumen Chaudhuri , Amrita Bhattacharya , A. K. Das , G. P. Das , B. N. Dev

A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small…

We show that synthesis-induced Metal -Insulator transition (MIT) for electronic transport along the orthorombic c axis of FeSb$_{2}$ single crystals has greatly enhanced electrical conductivity while keeping the thermopower at a relatively…

强关联电子 · 物理学 2012-10-12 Qing Jie , Rongwei Hu , Emil Bozin , A. Llobet , I. Zaliznyak , C. Petrovic , Q. Li

We have synthesized MgB2/Pb planar junctions to study the temperature and field dependence of the superconducting energy gap of MgB2. The major peak occurs at Delta of about 2 meV, and this corresponds to a 2Delta/kBTc value of 1.18. While…

超导电性 · 物理学 2009-11-07 Mohamed H. Badr , K. -W. Ng

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

The percentage of substitutional doping of magnetic atoms (Mn) in group-IV-based dilute magnetic semiconductors (DMS) can be increased by co-doping with another conventional electronic dopant (e-dopant) [Zhu et al., Phys. Rev. Lett. 100,…

材料科学 · 物理学 2009-06-04 Hua Chen , Wenguang Zhu , Efthimios Kaxiras , Zhenyu Zhang

It has been shown that graphene doping is sufficient to lead to an improvement in the critical current density - field performance (Jc(B)), with little change in the transition temperature in MgB2. At 3.7 at% graphene doping of MgB2 an…

超导电性 · 物理学 2015-05-18 X. Xu , S. X. Dou , X. L. Wang , J. H. Kim , J. A. Stride , M. Choucair , W. K. Yeoh , R. K. Zheng , S. P. Ringer

Density functional theory based study of the pressure dependent physical properties of binary SnS compound has been carried out. The computed elastic constants reveal that SnS is mechanically stable and brittle under ambient conditions.…

材料科学 · 物理学 2022-10-31 Ayesha Tasnim , Md. Mahamudujjaman , Md. Asif Afzal , R. S. Islam , S. H. Naqib

Unlike in many other semiconductors, the band gap of PbTe increases considerably with temperature. We compute the thermoelectric transport properties of n-type PbTe from first principles including the temperature variation of the electronic…

材料科学 · 物理学 2019-12-19 Jiang Cao , José D. Querales-Flores , Stephen Fahy , Ivana Savić

The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type doping of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as…

材料科学 · 物理学 2019-01-10 Prashun Gorai , Eric S. Toberer , Vladan Stevanovic

A comprehensive study of the effects of carbohydrate doping on the superconductivity of MgB2 has been conducted. In accordance with the dual reaction model, more carbon substitution is achieved at lower sintering temperature. As the…

超导电性 · 物理学 2009-11-13 J. H. Kim , S. X. Dou , Sangjun Oh , M. Jercinovic , E. Babic , T. Nakane , H. Kumakura

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…

介观与纳米尺度物理 · 物理学 2012-07-31 Sugata Mukherjee , T. P. Kaloni

Cu$_3$SbSe$_4$ is a promising thermoelectric material due to high thermopower ($>400\ \mu$V/K) at 300K and higher. Although it has a simple crystal structure derived from zinc blende structure, previous work has shown that the physics of…

材料科学 · 物理学 2014-09-17 Dat T. Do , S. D. Manhanti

Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of…

超导电性 · 物理学 2009-11-07 S. X. Dou , S. Soltanian , J. Horvat , X. L. Wang , P. Munroe , S. H. Zhou , M. Ionescu , H. K. Liu , M. Tomsic

We have measured the resistivity and the Seebeck coefficient of a MgB2 sintered sample. The temperature dependence of resistivity is fitted well by a generalized Bloch-Gruneisen equation with a Debye temperature of 1050 K. The Seebeck…

The structural and electronic properties of new structural cubic (GaN)$_1$/(ZnO)$_1$ superlattice have been investigated using two different theoretical techniques: the full potential-linearized augmented plane wave (FP-LAPW) method and the…

材料科学 · 物理学 2013-04-30 M. R. Boufatah , A. E. Merad

The Mg2X (X=Si, Ge, Sn) based alloy is an eco-friendly thermoelectric material for mid-temperature applications. The Mg2Si1-xSnx and Mg2Ge1-xSnx alloys can be phase-separated into Si(Ge)- and Sn-rich phases during material synthesis,…