相关论文: InAs nanowire with epitaxial aluminium as a single…
We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are…
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of…
Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high…
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current…
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs…
Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with shells of $\beta$-Sn. The wires grow via the…
Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density.…
The superconducting proximity effect has been the focus of significant research efforts over many years and has recently attracted renewed interest as the basis of topologically non-trivial states in materials with a large spin orbit…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…
Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the…
Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and…
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important…
Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize…
Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in…
Hybrid semiconducting nanowire devices combining epitaxial superconductor and ferromagnetic insulator layers have been recently explored experimentally as an alternative platform for topological superconductivity at zero applied magnetic…
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of semiconductor…
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating…
The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of…